制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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BSO301SPNTMA1MOSFET P-CH 30V 12.6A 8DSO Infineon Technologies |
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OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 12.6A (Ta) | 4.5V, 10V | 8mOhm @ 14.9A, 10V | 2V @ 250µA | 136 nC @ 10 V | ±20V | 5890 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
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IRFH5250TR2PBFMOSFET N-CH 25V 45A PQFN Infineon Technologies |
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- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 45A (Ta), 100A (Tc) | - | 1.15mOhm @ 50A, 10V | 2.35V @ 150µA | 110 nC @ 10 V | - | 7174 pF @ 13 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
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IRFH5300TR2PBFMOSFET N-CH 30V 40A PQFN Infineon Technologies |
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- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Ta), 100A (Tc) | - | 1.4mOhm @ 50A, 10V | 2.35V @ 150µA | 120 nC @ 10 V | - | 7200 pF @ 15 V | - | - | - | - | - | Surface Mount | PQFN (5x6) Single Die |
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IRFH5106TR2PBFMOSFET N-CH 60V 100A 5X6 PQFN Infineon Technologies |
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- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 21A (Ta), 100A (Tc) | - | 5.6mOhm @ 50A, 10V | 4V @ 250µA | 75 nC @ 10 V | - | 3090 pF @ 25 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
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IRFI2807MOSFET N-CH 75V 40A TO220AB FP Infineon Technologies |
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HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 40A (Tc) | 10V | 13mOhm @ 43A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 3400 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
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IRF3205ZMOSFET N-CH 55V 75A TO220AB Infineon Technologies |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF4905STRRPBFMOSFET P-CH 55V 42A D2PAK Infineon Technologies |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 3500 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF1405ZMOSFET N-CH 55V 75A TO220AB Infineon Technologies |
0 | - |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 4780 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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AUIRF2903ZSTRLMOSFET N-CH 30V 160A D2PAK Infineon Technologies |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 160A (Tc) | 10V | 2.4mOhm @ 75A, 10V | 4V @ 150µA | 240 nC @ 10 V | ±20V | 6320 pF @ 25 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IAUMN08S5N013GATMA1MOSFET_(75V 120V( Infineon Technologies |
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- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |