上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD50N04S308ATMA1IPD50N04 - 20V-40V N-CHANNEL AUT Infineon Technologies |
125,808 | - |
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规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 7.5mOhm @ 50A, 10V | 4V @ 40µA | 35 nC @ 10 V | ±20V | 2350 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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AUIRFZ34NAUIRFZ34 - 55V-60V N-CHANNEL AUT Infineon Technologies |
6,000 | - |
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规格书 |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 29A (Tc) | 10V | 40mOhm @ 16A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF6637TRPBFIRF6637 - 12V-300V N-CHANNEL POW Infineon Technologies |
1,172 | - |
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规格书 |
HEXFET® | DirectFET™ Isometric MP | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 59A (Tc) | 4.5V, 10V | 7.7mOhm @ 14A, 10V | 2.35V @ 250µA | 17 nC @ 4.5 V | ±20V | 1330 pF @ 15 V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MP |
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AUIRFZ48ZAUIRFZ48Z - 55V-60V N-CHANNEL AU Infineon Technologies |
4,817 | - |
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规格书 |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 61A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 1720 pF @ 25 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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SPP08N50C3XKSA1SPP08N50 - 800V COOLMOS N-CHANNE Infineon Technologies |
22,195 | - |
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规格书 |
CoolMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 560 V | 7.6A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32 nC @ 10 V | ±20V | 750 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP70N04S406AKSA1MOSFET_(20V,40V) Infineon Technologies |
49,890 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 10V | 6.5mOhm @ 70A, 10V | 4V @ 26µA | 32 nC @ 10 V | ±20V | 2550 pF @ 25 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IRF7483MTRPBFIRF7483 - 12V-300V N-CHANNEL POW Infineon Technologies |
3,799 | - |
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规格书 |
StrongIRFET™ | DirectFET™ Isometric MF | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 135A (Tc) | 6V, 10V | 2.3mOhm @ 81A, 10V | 3.9V @ 100µA | 81 nC @ 10 V | ±20V | 3913 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric MF |
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IPA50R280E6IPA50R280 - 500V, CoolMOS N-Chan Infineon Technologies |
349 | - |
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规格书 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AUIRFN8478TRAUIRFN8478 - 20V-40V N-CHANNEL A Infineon Technologies |
21,000 | - |
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规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPI072N10N3GOPTLMOS N-CHANNEL POWER MOSFET Infineon Technologies |
500 | - |
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规格书 |
OptiMOS™ 3 | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 6V, 10V | 7.2mOhm @ 80A, 10V | 3.5V @ 90µA | 68 nC @ 10 V | ±20V | 4910 pF @ 50 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
