制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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AUIRFS8408-7TRLMOSFET N-CH 40V 240A D2PAK Infineon Technologies |
700 | - |
|
![]() 规格书 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1mOhm @ 100A, 10V | 3.9V @ 250µA | 315 nC @ 10 V | ±20V | 10250 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-900 |
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IGLR60R260D1XUMA1GAN HV Infineon Technologies |
4,734 | - |
|
![]() 规格书 |
CoolGaN™ | 8-PowerTDFN | Tape & Reel (TR) | Last Time Buy | N-Channel | GaNFET (Gallium Nitride) | 600 V | 10.4A (Tc) | - | - | 1.6V @ 690µA | - | -10V | 110 pF @ 400 V | - | 52W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSON-8-7 |
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IPZ60R037P7XKSA1MOSFET N-CH 650V 76A TO247-4 Infineon Technologies |
0 | - |
|
- |
CoolMOS™ P7 | TO-247-4 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 37mOhm @ 29.5A, 10V | 4V @ 1.48mA | 121 nC @ 10 V | ±20V | 5243 pF @ 400 V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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IAUS300N08S5N014ATMA1MOSFET N-CH 80V 300A HSOG-8 Infineon Technologies |
1,800 | - |
|
![]() 规格书 |
OptiMOS™ | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 300A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.8V @ 230µA | 187 nC @ 10 V | ±20V | 13178 pF @ 40 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HSOG-8-1 |
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IPB60R090CFD7ATMA1MOSFET N-CH 600V 25A TO263-3 Infineon Technologies |
1,154 | - |
|
![]() 规格书 |
CoolMOS™ CFD7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 90mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51 nC @ 10 V | ±20V | 2103 pF @ 400 V | - | 124W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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SIPC69SN60C3X3SA1N-CHANNEL POWER MOSFET Infineon Technologies |
3,000 | - |
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- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SIPC69SN60C3X2SA1N-CHANNEL POWER MOSFET Infineon Technologies |
0 | - |
|
- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AUIRF7737L2TRMOSFET N-CH 40V 31A DIRECTFET Infineon Technologies |
7,373 | - |
|
![]() 规格书 |
HEXFET® | DirectFET™ Isometric L6 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 31A (Ta), 156A (Tc) | 10V | 1.9mOhm @ 94A, 10V | 4V @ 150µA | 134 nC @ 10 V | ±20V | 5469 pF @ 25 V | - | 3.3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DIRECTFET L6 |
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AUIRF2804STRLMOSFET N-CH 40V 195A D2PAK Infineon Technologies |
599 | - |
|
![]() 规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6450 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IPB180N10S403ATMA1MOSFET N-CH 100V 180A TO263-7 Infineon Technologies |
1,144 | - |
|
![]() 规格书 |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 3.3mOhm @ 100A, 10V | 3.5V @ 180µA | 140 nC @ 10 V | ±20V | 10120 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-3 |