上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF9Z34NLPBFPLANAR 40<-<100V Infineon Technologies |
335 | - |
|
规格书 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 19A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 620 pF @ 25 V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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AUIRLU3114ZAUIRLU3114Z - 20V-40V N-CHANNEL Infineon Technologies |
3,631 | - |
|
规格书 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 130A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56 nC @ 4.5 V | ±16V | 3810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO251-3 |
|
AUIRLU3114Z-701TRLAUIRLU3114Z - 20V-40V N-CHANNEL Infineon Technologies |
39,000 | - |
|
规格书 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56 nC @ 4.5 V | ±16V | 3810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO251-3 |
|
IRF40DM229IRF40 - 12V-300V N-CHANNEL POWER Infineon Technologies |
4,194 | - |
|
规格书 |
StrongIRFET™ | DirectFET™ Isometric MF | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 159A (Tc) | 6V, 10V | 1.85mOhm @ 97A, 10V | 3.9V @ 100µA | 161 nC @ 10 V | ±20V | 5317 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric MF |
|
IRL8114PBFIRL8114 - 12V-300V N-CHANNEL POW Infineon Technologies |
8,800 | - |
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规格书 |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | - | 4.5mOhm @ 40A, 10V | 2.25V @ 250µA | 29 nC @ 4.5 V | ±20V | 2660 pF @ 15 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRF6797MTRPBFIRF6797 - 12V-300V N-CHANNEL POW Infineon Technologies |
16,950 | - |
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规格书 |
HEXFET® | DirectFET™ Isometric MX | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 36A (Ta), 210A (Tc) | 4.5V, 10V | 1.4mOhm @ 38A, 10V | 2.35V @ 150µA | 68 nC @ 4.5 V | ±20V | 5790 pF @ 13 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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AUIRF1010EZSAUIRF1010 - 55V-60V N-CHANNEL AU Infineon Technologies |
412 | - |
|
规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 8.5mOhm @ 51A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±20V | 2810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IRF7580MTRPBFIRF7580 - 12V-300V N-CHANNEL POW Infineon Technologies |
1,536 | - |
|
规格书 |
StrongIRFET™ | DirectFET™ Isometric ME | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 114A (Tc) | 6V, 10V | 3.6mOhm @ 70A, 10V | 3.7V @ 150µA | 180 nC @ 10 V | ±20V | 6510 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric ME |
|
AUIRFS8403AUIRFS8403 - 20V-40V N-CHANNEL A Infineon Technologies |
6,000 | - |
|
规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 123A (Tc) | 10V | 3.3mOhm @ 70A, 10V | 3.9V @ 100µA | 93 nC @ 10 V | ±20V | 3183 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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AUIRF1010ZLAUIRF1010 - 55V-60V N-CHANNEL AU Infineon Technologies |
5,000 | - |
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规格书 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | - | 7.5mOhm @ 75A, 10V | 4V @ 250µA | 95 nC @ 10 V | - | 2840 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
