制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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IPW50R140CPFKSA1MOSFET N-CH 550V 23A TO247-3 Infineon Technologies |
0 | - |
|
![]() 规格书 |
CoolMOS™ | TO-247-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 23A (Tc) | 10V | 140mOhm @ 14A, 10V | 3.5V @ 930µA | 64 nC @ 10 V | ±20V | 2540 pF @ 100 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IPP100N18N3GXKSA1N-CHANNEL POWER MOSFET Infineon Technologies |
8,500 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF6618TRPBFMOSFET N-CH 30V 30A DIRECTFET Infineon Technologies |
2,970 | - |
|
![]() 规格书 |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Ta), 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.35V @ 250µA | 65 nC @ 4.5 V | ±20V | 5640 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
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IRFI4410ZPBFMOSFET N-CH 100V 43A TO220AB FP Infineon Technologies |
522 | - |
|
![]() 规格书 |
HEXFET® | TO-220-3 Full Pack | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 43A (Tc) | 10V | 9.3mOhm @ 26A, 10V | 4V @ 150µA | 110 nC @ 10 V | ±30V | 4910 pF @ 50 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
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IPI11N60C3AAKSA2MOSFET N-CH I2PAK Infineon Technologies |
0 | - |
|
![]() 规格书 |
* | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRFB3407ZPBFMOSFET N-CH 75V 120A TO220AB Infineon Technologies |
964 | - |
|
![]() 规格书 |
HEXFET® | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 6.4mOhm @ 75A, 10V | 4V @ 150µA | 110 nC @ 10 V | ±20V | 4750 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF135SA204MOSFET N-CH 135V 160A D2PAK-7 Infineon Technologies |
2,400 | - |
|
![]() 规格书 |
HEXFET®, StrongIRFET™ | TO-263-7, D2PAK (6 Leads + Tab), Variant | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 135 V | 160A (Tc) | 10V | 5.9mOhm @ 96A, 10V | 4V @ 250µA | 315 nC @ 10 V | ±20V | 11690 pF @ 50 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7 |
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IRLSL4030PBFMOSFET N-CH 100V 180A TO262 Infineon Technologies |
835 | - |
|
![]() 规格书 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 4.5V, 10V | 4.3mOhm @ 110A, 10V | 2.5V @ 250µA | 130 nC @ 4.5 V | ±16V | 11360 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRFP3415PBFMOSFET N-CH 150V 43A TO247AC Infineon Technologies |
3,355 | - |
|
![]() 规格书 |
HEXFET® | TO-247-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 150 V | 43A (Tc) | 10V | 42mOhm @ 22A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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BSC0403NSATMA1150V, N-CH MOSFET, LOGIC LEVEL, Infineon Technologies |
249 | - |
|
![]() 规格书 |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 70A (Tc) | 8V, 10V | 11mOhm @ 35A, 10 | 4.6V @ 91µA | 28 nC @ 10 V | ±20V | 2100 pF @ 75 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-7 |