上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPA028N04NM3SXKSA1TRENCH <= 40V PG-TO220-3 Infineon Technologies |
500 | - |
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规格书 |
OptiMOS™ | TO-220-3 Full Pack | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 89A (Tc) | 10V | 2.8mOhm @ 89A, 10V | 4V @ 95µA | 120 nC @ 10 V | ±20V | 9500 pF @ 20 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPP052NE7N3GXKSA1MOSFET N-CH 75V 80A TO220-3 Infineon Technologies |
4,378 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 5.2mOhm @ 80A, 10V | 3.8V @ 91µA | 68 nC @ 10 V | ±20V | 4750 pF @ 37.5 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPD70N10S3L12ATMA1MOSFET N-CH 100V 70A TO252-3 Infineon Technologies |
4,047 | - |
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规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 4.5V, 10V | 11.5mOhm @ 70A, 10V | 2.4V @ 83µA | 77 nC @ 10 V | ±20V | 5550 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPB60R280CFD7ATMA1MOSFET N-CH 600V 9A TO263-3-2 Infineon Technologies |
960 | - |
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规格书 |
CoolMOS™ CFD7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 280mOhm @ 3.6A, 10V | 4.5V @ 180µA | 18 nC @ 10 V | ±20V | 807 pF @ 400 V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPI80N08S406AKSA1MOSFET N-CH 80V 80A TO262-3 Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 10V | 5.8mOhm @ 80A, 10V | 4V @ 90µA | 70 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-1 |
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IPB65R225C7ATMA2MOSFET N-CH 650V 11A TO263-3 Infineon Technologies |
858 | - |
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规格书 |
CoolMOS™ C7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20 nC @ 10 V | ±20V | 996 pF @ 400 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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AUIRLR3410TRLMOSFET N-CH 100V 17A DPAK Infineon Technologies |
33 | - |
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规格书 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34 nC @ 5 V | ±16V | 800 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3 |
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IPI120N04S302AKSA1MOSFET N-CH 40V 120A TO262-3 Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 2.3mOhm @ 80A, 10V | 4V @ 230µA | 210 nC @ 10 V | ±20V | 14300 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
BTS114AE3045AN-CHANNEL POWER MOSFET Infineon Technologies |
10,937 | - |
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规格书 |
TEMPFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 17A (Tc) | 10V | 100mOhm @ 9A, 10V | 3.5V @ 1mA | - | ±20V | 600 pF @ 25 V | - | 50W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO220-3-5 |
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BTS114A E3045AN-CHANNEL POWER MOSFET Infineon Technologies |
4,000 | - |
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规格书 |
TEMPFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 17A (Tc) | 10V | 100mOhm @ 9A, 10V | 3.5V @ 1mA | - | ±20V | 600 pF @ 25 V | - | 50W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO220-3-5 |
