上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFSL3107PBFMOSFET N-CH 75V 195A TO262 Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 195A (Tc) | 10V | 3mOhm @ 140A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9370 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRF6726MTRPBFMOSFET N-CH 30V 32A DIRECTFET Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.7mOhm @ 32A, 10V | 2.35V @ 150µA | 77 nC @ 4.5 V | ±20V | 6140 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
|
IPP120N10S403AKSA1MOSFET N-CH 100V 120A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 3.9mOhm @ 100A, 10V | 3.5V @ 180µA | 140 nC @ 10 V | ±20V | 10120 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-1 |
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IPP80R450P7XKSA1MOSFET N-CH 800V 11A TO220-3 Infineon Technologies |
5,467 | - |
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规格书 |
CoolMOS™ | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 450mOhm @ 4.5A, 10V | 3.5V @ 220µA | 24 nC @ 10 V | ±20V | 770 pF @ 500 V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
AUIRF7732S2TRMOSFET N-CH 40V 14A DIRECTFET SC Infineon Technologies |
1,270 | - |
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规格书 |
HEXFET® | DirectFET™ Isometric SC | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 14A (Ta) | 10V | 6.95mOhm @ 33A, 10V | 4V @ 50µA | 45 nC @ 10 V | ±20V | 1700 pF @ 25 V | - | 2.5W (Ta), 41W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DIRECTFET™ SC |
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IPA083N10NM5SXKSA1MOSFET N-CH 100V 50A TO220 Infineon Technologies |
353 | - |
|
规格书 |
OptiMOS™ 5 | TO-220-3 Full Pack | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 6V, 10V | 8.3mOhm @ 25A, 10V | 3.8V @ 49µA | 40 nC @ 10 V | ±20V | 2700 pF @ 50 V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
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IPB240N03S4LR9ATMA1MOSFET N-CH 30V 240A TO263-7 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 240A (Tc) | 4.5V, 10V | 0.92mOhm @ 100A, 10V | 2.2V @ 180µA | 300 nC @ 10 V | ±16V | 20300 pF @ 25 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-3 |
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BSC0302LSATMA1MOSFET N-CH 120V 12A/99A TDSON Infineon Technologies |
5,017 | - |
|
规格书 |
OptiMOS™ 2 | 8-PowerTDFN | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 120 V | 12A (Ta), 99A (Tc) | 4.5V, 10V | 8mOhm @ 50A, 10V | 2.4V @ 112µA | 79 nC @ 10 V | ±20V | 7400 pF @ 60 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-7 |
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BTS244ZE3062AATMA1N-CHANNEL POWER MOSFET Infineon Technologies |
31,454 | - |
|
规格书 |
* | TO-263-5, D2PAK (4 Leads + Tab), TO-263BB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 35A (Tc) | 4.5V, 10V | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | ±20V | 2660 pF @ 25 V | - | 170W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-5-2 |
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IRFS4510TRLPBFMOSFET N-CH 100V 61A D2PAK Infineon Technologies |
4,000 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 61A (Tc) | 10V | 13.9mOhm @ 37A, 10V | 4V @ 100µA | 87 nC @ 10 V | ±20V | 3180 pF @ 50 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
