上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GA05JT03-46TRANS SJT 300V 9A TO46 GeneSiC Semiconductor |
0 | - |
|
规格书 |
- | TO-46-3 | Bulk | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 300 V | 9A (Tc) | - | 240mOhm @ 5A | - | - | - | - | - | 20W (Tc) | -55°C ~ 225°C (TJ) | - | - | Through Hole | TO-46 |
|
GA16JT17-247TRANS SJT 1700V 16A TO247AB GeneSiC Semiconductor |
0 | - |
|
规格书 |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 16A (Tc) (90°C) | - | 110mOhm @ 16A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
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GA50JT12-247TRANS SJT 1200V 100A TO247AB GeneSiC Semiconductor |
0 | - |
|
规格书 |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | 7209 pF @ 800 V | - | 583W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
|
GA50JT12-263TRANSISTOR 1200V 100A TO263-7 GeneSiC Semiconductor |
0 | - |
|
- |
* | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
G2R120MT33J-TR3300V 120M TO-263-7 G2R SIC MOSF GeneSiC Semiconductor |
0 | - |
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规格书 |
LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 33A (Tc) | 20V | 156mOhm @ 15A, 20V | 3.5V @ 4mA | 130 nC @ 20 V | +20V, -5V | 3009 pF @ 1000 V | - | 366W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
G2R120MT33JSIC MOSFET N-CH TO263-7 GeneSiC Semiconductor |
0 | - |
|
规格书 |
G2R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 35A | 20V | 156mOhm @ 20A, 20V | - | 145 nC @ 20 V | +25V, -10V | 3706 pF @ 1000 V | - | - | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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GA100JT12-227TRANS SJT 1200V 160A SOT227 GeneSiC Semiconductor |
0 | - |
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- |
- | SOT-227-4, miniBLOC | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 160A (Tc) | - | 10mOhm @ 100A | - | - | - | 14400 pF @ 800 V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
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GA50JT17-247TRANS SJT 1700V 100A TO247 GeneSiC Semiconductor |
0 | - |
|
规格书 |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | - | - | 583W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247 |
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2N7636-GATRANS SJT 650V 4A TO276 GeneSiC Semiconductor |
0 | - |
|
- |
- | TO-276AA | Bulk | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324 pF @ 35 V | - | 125W (Tc) | -55°C ~ 225°C (TJ) | - | - | Surface Mount | TO-276 |
|
2N7635-GATRANS SJT 650V 4A TO257 GeneSiC Semiconductor |
0 | - |
|
- |
- | TO-257-3 | Bulk | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324 pF @ 35 V | - | 47W (Tc) | -55°C ~ 225°C (TJ) | - | - | Through Hole | TO-257 |
