上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GA10JT12-263TRANS SJT 1200V 25A GeneSiC Semiconductor |
0 | - |
|
规格书 |
- | - | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 25A (Tc) | - | 120mOhm @ 10A | - | - | - | 1403 pF @ 800 V | - | 170W (Tc) | 175°C (TJ) | - | - | Surface Mount | - |
|
GA10JT12-247TRANS SJT 1200V 10A TO247AB GeneSiC Semiconductor |
0 | - |
|
规格书 |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 10A (Tc) | - | 140mOhm @ 10A | - | - | - | - | - | 170W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
|
G3R30MT12JSIC MOSFET N-CH 96A TO263-7 GeneSiC Semiconductor |
0 | - |
|
规格书 |
G3R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 96A (Tc) | 15V | 36mOhm @ 50A, 15V | 2.69V @ 12mA | 155 nC @ 15 V | ±15V | 3901 pF @ 800 V | - | 459W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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GA04JT17-247TRANS SJT 1700V 4A TO247AB GeneSiC Semiconductor |
0 | - |
|
- |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 4A (Tc) (95°C) | - | 480mOhm @ 4A | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
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GA20JT12-247TRANS SJT 1200V 20A TO247AB GeneSiC Semiconductor |
0 | - |
|
规格书 |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 20A (Tc) | - | 70mOhm @ 20A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
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GA20JT12-263TRANS SJT 1200V 45A D2PAK GeneSiC Semiconductor |
0 | - |
|
规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 45A (Tc) | - | 60mOhm @ 20A | - | - | - | 3091 pF @ 800 V | - | 282W (Tc) | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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GA10SICP12-263TRANS SJT 1200V 25A D2PAK GeneSiC Semiconductor |
0 | - |
|
规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 25A (Tc) | - | 100mOhm @ 10A | - | - | - | 1403 pF @ 800 V | - | 170W (Tc) | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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GA20SICP12-247TRANS SJT 1200V 45A TO247AB GeneSiC Semiconductor |
0 | - |
|
规格书 |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 45A (Tc) | - | 50mOhm @ 20A | - | - | - | 3091 pF @ 800 V | - | 282W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AB |
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GA08JT17-247TRANS SJT 1700V 8A TO247AB GeneSiC Semiconductor |
0 | - |
|
- |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 8A (Tc) (90°C) | - | 250mOhm @ 8A | - | - | - | - | - | 48W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
|
GA05JT01-46TRANS SJT 100V 9A TO46 GeneSiC Semiconductor |
0 | - |
|
规格书 |
- | TO-46-3 | Bulk | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 100 V | 9A (Tc) | - | 240mOhm @ 5A | - | - | - | - | - | 20W (Tc) | -55°C ~ 225°C (TJ) | - | - | Through Hole | TO-46 |
