上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G3F45MT06J-TR650V 40M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor |
800 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 56A (Tc) | 15V, 18V | 54mOhm @ 20A, 18V | 4.3V @ 8mA | 55 nC @ 18 V | +22V, -10V | 1640 pF @ 400 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F65MT12J-TR1200V 65M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor |
800 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 37A (Tc) | 18V | 86mOhm @ 15A, 18V | 4.3V @ 10mA | 55 nC @ 18 V | +22V, -10V | 1298 pF @ 800 V | - | 171W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F65MT12K1200V 65M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor |
600 | - |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 35A (Tc) | 18V | 86mOhm @ 15A, 18V | 4.3V @ 10mA | 55 nC @ 18 V | +22V, -10V | 1298 pF @ 800 V | - | 153W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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G3F45MT06D650V 40M TO-247-3 G3F SIC MOSFET GeneSiC Semiconductor |
600 | - |
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- |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 |
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G3F33MT06J-TR650V 27M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor |
800 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 80A (Tc) | 15V, 18V | 38mOhm @ 26A, 18V | 4.3V @ 12mA | 81 nC @ 18 V | +22V, -10V | 2394 pF @ 400 V | - | 261W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F45MT06K650V 40M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor |
600 | - |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 52A (Tc) | 15V, 18V | 54mOhm @ 20A, 18V | 4.3V @ 8mA | 55 nC @ 18 V | +22V, -10V | 1640 pF @ 400 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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G3F40MT12J-TR1200V 40M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor |
800 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 59A (Tc) | 18V | 53mOhm @ 20A, 18V | 4.3V @ 16mA | 86 nC @ 18 V | +22V, -10V | 2023 pF @ 800 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F40MT12K1200V 40M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor |
552 | - |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 55A (Tc) | 18V | 53mOhm @ 20A, 18V | 4.3V @ 16mA | 86 nC @ 18 V | +22V, -10V | 2023 pF @ 800 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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G3F33MT06K650V 27M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor |
600 | - |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 74A (Tc) | 15V, 18V | 38mOhm @ 26A, 18V | 4.3V @ 12mA | 81 nC @ 18 V | +22V, -10V | 2394 pF @ 400 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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G3R40MT12J-TR1200V 40M TO-263-7 G3R SIC MOSFE GeneSiC Semiconductor |
630 | - |
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规格书 |
G3R™, LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 66A (Tc) | 15V, 18V | 45mOhm @ 35A, 18V | 2.7V @ 18mA | 88 nC @ 15 V | +22V, -10V | 2897 pF @ 800 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
