上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G2R1000MT17JSIC MOSFET N-CH 3A TO263-7 GeneSiC Semiconductor |
10,528 | - |
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规格书 |
G2R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 3A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 4V @ 2mA | - | +20V, -10V | 139 pF @ 1000 V | - | 54W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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G3R160MT12JSIC MOSFET N-CH 19A TO263-7 GeneSiC Semiconductor |
415 | - |
|
规格书 |
G3R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 19A (Tc) | 15V | 208mOhm @ 10A, 15V | 2.7V @ 5mA (Typ) | 23 nC @ 15 V | +20V, -10V | 724 pF @ 800 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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G3R450MT17JSIC MOSFET N-CH 9A TO263-7 GeneSiC Semiconductor |
5,550 | - |
|
规格书 |
G3R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 9A (Tc) | 15V | 585mOhm @ 4A, 15V | 2.7V @ 2mA | 18 nC @ 15 V | ±15V | 454 pF @ 1000 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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G3R60MT07J750V 60M TO-263-7 G3R SIC MOSFET GeneSiC Semiconductor |
198 | - |
|
规格书 |
G3R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | +20V, -10V | - | - | - | - | - | - | Surface Mount | TO-263-7 |
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|
G3R40MT12JSIC MOSFET N-CH 75A TO263-7 GeneSiC Semiconductor |
421 | - |
|
规格书 |
G3R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 75A (Tc) | 15V | 48mOhm @ 35A, 15V | 2.7V @ 18mA (Typ) | 106 nC @ 15 V | ±15V | 2929 pF @ 800 V | - | 374W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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G2R1000MT33JSIC MOSFET N-CH 4A TO263-7 GeneSiC Semiconductor |
1,853 | - |
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规格书 |
G2R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 4A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 3.5V @ 2mA | 21 nC @ 20 V | +20V, -5V | 238 pF @ 1000 V | - | 74W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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G2R50MT33K3300V 50M TO-247-4 SIC MOSFET GeneSiC Semiconductor |
0 | - |
|
规格书 |
G2R™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 63A (Tc) | 20V | 50mOhm @ 40A, 20V | 3.5V @ 10mA (Typ) | 340 nC @ 20 V | +25V, -10V | 7301 pF @ 1000 V | - | 536W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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G3F320MT12J-TR1200V 320M TO-263-7 G3F SIC MOSF GeneSiC Semiconductor |
0 | - |
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- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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G3F60MT06L-TR650V 55M TO-LL G3F SIC MOSFET GeneSiC Semiconductor |
0 | - |
|
- |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 48A (Tc) | 15V, 18V | 75mOhm @ 15A, 18V | 4.3V @ 7mA | 45 nC @ 18 V | +22V, -10V | 1322 pF @ 400 V | - | 185W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TOLL |
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G3R60MT07J-TR650V 60M TO-263-7 G3R SIC MOSFET GeneSiC Semiconductor |
0 | - |
|
规格书 |
G3R™, LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 44A (Tc) | 15V | - | - | - | - | - | - | 182W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
