场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    MSCSM70TLM10C3AG

    MSCSM70TLM10C3AG

    MOSFET 4N-CH 700V 241A MODULE

    Microchip Technology

    15

    -

    - Module Box Active Silicon Carbide (SiC) 4 N-Channel - 700V 241A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA (Typ) 430nC @ 20V 9000pF @ 700V 690W (Tc) -40°C ~ 175°C (TJ) - - Through Hole Module
    MSCSM120AM11CT3AG

    MSCSM120AM11CT3AG

    MOSFET 2N-CH 1200V 254A SP3F

    Microchip Technology

    3
    MSCSM120AM11CT3AG

    规格书

    - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 254A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 3mA 696nC @ 20V 9060pF @ 1000V 1.067kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    MSCM20AM058G

    MSCM20AM058G

    MOSFET 2N-CH 200V 280A LP8

    Microchip Technology

    3
    MSCM20AM058G

    规格书

    - Module Box Active MOSFET (Metal Oxide) 2 N Channel (Phase Leg) - 200V 280A (Tc) - - - - - - - - Chassis Mount LP8
    MSCSM170TLM15CAG

    MSCSM170TLM15CAG

    MOSFET 4N-CH 1700V 179A SP6C

    Microchip Technology

    5

    -

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV) 179A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V 9900pF @ 1000V 843W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
    MSCSM70TLM07CAG

    MSCSM70TLM07CAG

    MOSFET 4N-CH 700V 349A SP6C

    Microchip Technology

    4

    -

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 700V 349A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 966W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
    MSCSM70VR1M10CTPAG

    MSCSM70VR1M10CTPAG

    MOSFET 6N-CH 700V 238A

    Microchip Technology

    2
    MSCSM70VR1M10CTPAG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 700V 238A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 674W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120TLM11CAG

    MSCSM120TLM11CAG

    MOSFET 4N-CH 1200V 251A SP6C

    Microchip Technology

    4

    -

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 3mA 696nC @ 20V 9000pF @ 1000V 1042W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
    MSCSM170TLM11CAG

    MSCSM170TLM11CAG

    MOSFET 4N-CH 1700V 238A SP6C

    Microchip Technology

    5

    -

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV) 238A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V 13200pF @ 1000V 1114W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
    MSCSM120TLM08CAG

    MSCSM120TLM08CAG

    MOSFET 4N-CH 1200V 333A SP6C

    Microchip Technology

    6

    -

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 333A (Tc) 7.8mOhm @ 80A, 20V 2.8V @ 4mA 928nC @ 20V 12000pF @ 1000V 1378W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
    MSCSM120AM027CT6AG

    MSCSM120AM027CT6AG

    MOSFET 2N-CH 1200V 733A SP6C

    Microchip Technology

    12
    MSCSM120AM027CT6AG

    规格书

    - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 9mA 2088nC @ 20V 27000pF @1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
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