场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    IRLHS6276TRPBF

    IRLHS6276TRPBF

    MOSFET 2N-CH 20V 4.5A PQFN

    Infineon Technologies

    0
    IRLHS6276TRPBF

    规格书

    HEXFET® 6-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 4.5A 45mOhm @ 3.4A, 4.5V 1.1V @ 10µA 3.1nC @ 4.5V 310pF @ 10V 1.5W -55°C ~ 150°C (TJ) - - Surface Mount 6-PQFN Dual (2x2)
    FF2600UXTR33T2M1BPSA1

    FF2600UXTR33T2M1BPSA1

    MOSFET 2N-CH 3300V AG-XHP2K33

    Infineon Technologies

    0
    FF2600UXTR33T2M1BPSA1

    规格书

    CoolSiC™ Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 3300V (3.3kV) 720A (Tc) 3.1mOhm @ 750A, 15V 5.55V @ 675mA 3750nC @ 15V 152000pF @ 1.8kV - -40°C ~ 175°C (TJ) - - Chassis Mount AG-XHP2K33
    IPG20N04S412ATMA1

    IPG20N04S412ATMA1

    MOSFET 2N-CH 40V 20A 8TDSON

    Infineon Technologies

    0
    IPG20N04S412ATMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 20A 12.2mOhm @ 17A, 10V 4V @ 15µA 18nC @ 10V 1470pF @ 25V 41W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-4
    IPG20N04S4L11AATMA1

    IPG20N04S4L11AATMA1

    MOSFET 2N-CH 40V 20A 8TDSON

    Infineon Technologies

    0
    IPG20N04S4L11AATMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 20A 11.6mOhm @ 17A, 10V 2.2V @ 15µA 26nC @ 10V 1990pF @ 25V 41W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
    IAUC45N04S6L063HATMA1

    IAUC45N04S6L063HATMA1

    MOSFET 2N-CH 40V 45A 8TDSON

    Infineon Technologies

    0
    IAUC45N04S6L063HATMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate 40V 45A (Tj) 6.3mOhm @ 22A, 10V 2V @ 9µA 13nC @ 10V 775pF @ 25V 41W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-57
    IPG20N04S4L07AATMA1

    IPG20N04S4L07AATMA1

    MOSFET 2N-CH 40V 20A 8TDSON

    Infineon Technologies

    0
    IPG20N04S4L07AATMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 20A 7.2mOhm @ 17A, 10V 2.2V @ 30µA 50nC @ 10V 3980pF @ 25V 65W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
    DF419MR20W3M1HFB11BPSA1

    DF419MR20W3M1HFB11BPSA1

    MOSFET 4N-CH 2000V 50A AG-EASY3B

    Infineon Technologies

    1
    DF419MR20W3M1HFB11BPSA1

    规格书

    EasyPACK™ Module Tray Active MOSFET (Metal Oxide) 4 N-Channel - 2000V (2kV) 50A (Tj) 26.5mOhm @ 60A, 18V 5.15V @ 34mA 234nC @ 18V 7240pF @ 1.2kV - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY3B
    ISA220280C03LMDSXTMA1

    ISA220280C03LMDSXTMA1

    ISA220280C03LMDSXTMA1

    Infineon Technologies

    0
    ISA220280C03LMDSXTMA1

    规格书

    OptiMOS™ 3 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc) 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V 2.7V @ 1mA 13.4nC @ 10V 1400pF @ 15V 1.4W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8-920
    IRF7328TRPBF

    IRF7328TRPBF

    MOSFET 2P-CH 30V 8A 8SO

    Infineon Technologies

    0
    IRF7328TRPBF

    规格书

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 8A 21mOhm @ 8A, 10V 2.5V @ 250µA 78nC @ 10V 2675pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IQE220N15NM5SCATMA1

    IQE220N15NM5SCATMA1

    MOSFET 2N-CH 150V 8WHSON

    Infineon Technologies

    0
    IQE220N15NM5SCATMA1

    规格书

    OptiMOS™ 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 150V - - - - - - - - - Surface Mount PG-WHSON-8-1
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