场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    FF4MR20KM1HPHPSA1

    FF4MR20KM1HPHPSA1

    MOSFET 2N-CH 2000V AG-62MMHB

    Infineon Technologies

    10
    FF4MR20KM1HPHPSA1

    规格书

    C, CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 2000V (2kV) 280A (Tc) 5.3mOhm @ 300A, 18V 5.15V @ 168mA 1170nC @ 18V 36100pF @ 1.2kV - -40°C ~ 175°C - - Chassis Mount AG-62MMHB
    FF1MR12KM1HHPSA1

    FF1MR12KM1HHPSA1

    MOSFET

    Infineon Technologies

    12
    FF1MR12KM1HHPSA1

    规格书

    - - Tray Active - - - - - - - - - - - - - - -
    FF1MR12KM1HPHPSA1

    FF1MR12KM1HPHPSA1

    MOSFET

    Infineon Technologies

    16
    FF1MR12KM1HPHPSA1

    规格书

    - - Tray Active - - - - - - - - - - - - - - -
    IPB13N03LBG

    IPB13N03LBG

    MOSFET N-CH

    Infineon Technologies

    999

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    DF23MR12W1M1B11BPSA1

    DF23MR12W1M1B11BPSA1

    MOSFET 2N-CH 1200V AG-EASY1BM-2

    Infineon Technologies

    12
    DF23MR12W1M1B11BPSA1

    规格书

    CoolSiC™+ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V (Typ) 5.55V @ 10mA 62nC @ 15V 1840pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1BM-2
    F423MR12W1M1PB11BPSA1

    F423MR12W1M1PB11BPSA1

    MOSFET 4N-CH 1200V 50A AG-EASY1B

    Infineon Technologies

    3
    F423MR12W1M1PB11BPSA1

    规格书

    EasyPACK™ Module Tray Obsolete MOSFET (Metal Oxide) 4 N-Channel - 1200V (1.2kV) 50A 22.5mOhm @ 50A, 15V 5.5V @ 20mA 124nC @ 15V 3.68nF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B-2
    F411MR12W2M1B76BOMA1

    F411MR12W2M1B76BOMA1

    MOSFET 4N-CH 1200V AG-EASY1B

    Infineon Technologies

    0

    -

    EasyPACK™ CoolSiC™ Module Bulk Obsolete Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 100A (Tj) 11.3mOhm @ 100A, 15V 5.55V @ 40mA 248nC @ 15V 7360pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B-2
    FF2MR12KM1HOSA1

    FF2MR12KM1HOSA1

    MOSFET 2N-CH 1200V 500A AG-62MM

    Infineon Technologies

    13
    FF2MR12KM1HOSA1

    规格书

    CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 500A (Tc) 2.13mOhm @ 500A, 15V 5.15V @ 224mA 1340nC @ 15V 39700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-62MM
    FF4MR12W2M1HB11BPSA1

    FF4MR12W2M1HB11BPSA1

    MOSFET 2N-CH 1200V 170A MODULE

    Infineon Technologies

    0
    FF4MR12W2M1HB11BPSA1

    规格书

    CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 170A (Tj) 4mOhm @ 200A, 18V 5.15V @ 80mA 594nC @ 18V 17600pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
    FS02MR12A8MA2BBPSA1

    FS02MR12A8MA2BBPSA1

    MOSFET 6N-CH 1200V 390A

    Infineon Technologies

    0

    -

    HybridPACK™ Module Tray Active Silicon Carbide (SiC) 6 N-Channel Silicon Carbide (SiC) 1200V (1.2kV) 390A (Tj) 1.9mOhm @ 390A, 18V 4.55V @ 160mA 1.19µC @ 18V 34500pF @ 750V - -40°C ~ 175°C (TJ) - - Chassis Mount -
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