场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    FF17MR12W1M1HB11BPSA1

    FF17MR12W1M1HB11BPSA1

    MOSFET 1200V AG-EASY1B

    Infineon Technologies

    13
    FF17MR12W1M1HB11BPSA1

    规格书

    CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
    FS33MR12W1M1HB11BPSA1

    FS33MR12W1M1HB11BPSA1

    MOSFET 1200V AG-EASY1B

    Infineon Technologies

    3
    FS33MR12W1M1HB11BPSA1

    规格书

    CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
    FF8MR12W1M1HS4PB11BPSA1

    FF8MR12W1M1HS4PB11BPSA1

    MOSFET 2N-CH 1200V AG-EASY1B

    Infineon Technologies

    4
    FF8MR12W1M1HS4PB11BPSA1

    规格书

    CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 100A (Tj) 8.1mOhm @ 100A, 18V 5.15V @ 40mA 297nC @ 18V 8800pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B
    F3L8MR12W2M1HPB11BPSA1

    F3L8MR12W2M1HPB11BPSA1

    MOSFET 2N-CH 1200V 85A AG-EASY2B

    Infineon Technologies

    24
    F3L8MR12W2M1HPB11BPSA1

    规格书

    EasyPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 85A (Tj) 12mOhm @ 100A, 18V 5.15V @ 40mA 297nC @ 18V 8800pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY2B
    FS13MR12W2M1HB70BPSA1

    FS13MR12W2M1HB70BPSA1

    MOSFET 6N-CH 1200V 62.5A

    Infineon Technologies

    15
    FS13MR12W2M1HB70BPSA1

    规格书

    CoolSiC™ - Tray Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 62.5A (Tc) 11.7mOhm @ 62.5A, 18V 5.15V @ 28mA 200nC @ 18V 6050pF @ 800V - - - - - -
    FF6MR12KM1HHPSA1

    FF6MR12KM1HHPSA1

    MOSFET

    Infineon Technologies

    10
    FF6MR12KM1HHPSA1

    规格书

    - - Tray Active - - - - - - - - - - - - - - -
    FS55MR12W1M1HB11NPSA1

    FS55MR12W1M1HB11NPSA1

    MOSFET 6N-CH 1200V 15A AG-EASY1B

    Infineon Technologies

    18
    FS55MR12W1M1HB11NPSA1

    规格书

    EasyPACK™, CoolSiC™ Module Tray Active Silicon Carbide (SiC) 6 N-Channel (Full Bridge) - 1200V (1.2kV) 15A (Tj) 79mOhm @ 15A, 18V 5.15V @ 6mA 45nC @ 18V 1350pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
    FF2MR12W3M1HB11BPSA1

    FF2MR12W3M1HB11BPSA1

    MOSFET 4N-CH 1200V AG-EASY3B

    Infineon Technologies

    17
    FF2MR12W3M1HB11BPSA1

    规格书

    EasyPACK™, CoolSiC™ Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 400A (Tj) 2.27mOhm @ 400A, 18V 5.15V @ 224mA 1600nC @ 18V 48400pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY3B
    FS03MR12A6MA1LBBPSA1

    FS03MR12A6MA1LBBPSA1

    MOSFET 6N-CH 1200V AG-HYBRIDD

    Infineon Technologies

    2
    FS03MR12A6MA1LBBPSA1

    规格书

    HybridPACK™ Module Tray Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 400A 3.7mOhm @ 400A, 15V 5.55V @ 240mA 1320nC @ 15V 42500pF @ 600V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-HYBRIDD-2
    DF16MR12W1M1HFB67BPSA1

    DF16MR12W1M1HFB67BPSA1

    MOSFET 2N-CH 1200V 25A

    Infineon Technologies

    24
    DF16MR12W1M1HFB67BPSA1

    规格书

    EasyPACK™, CoolSiC™ - Tray Active - 2 N-Channel - 1200V (1.2kV) 25A 32.3mOhm @ 25A, 18V 5.15V @ 10mA 74nC @ 18V 2200pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
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