图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | FET 特性 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 输入电容 (Ciss)(最大值)@ Vds | 功率 - 最大值 | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FF6MR12W2M1HB11BPSA1MOSFET 2N-CH 1200V 145A MODULE Infineon Technologies |
18 |
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![]() 规格书 |
CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 145A (Tj) | 5.4mOhm @ 150A, 18V | 5.15V @ 60mA | 446nC @ 18V | 13200pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | Module |
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FS13MR12W2M1HPB11BPSA1MOSFET Infineon Technologies |
18 |
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![]() 规格书 |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FF4MR12W2M1HPB11BPSA1MOSFET 2N-CH 1200V AG-EASY2B Infineon Technologies |
17 |
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![]() 规格书 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 170A | 4mOhm @ 200A, 18V | 5.15V @ 80mA | 594nC @ 18V | 17600pF @ 800V | 20mW | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-EASY2B |
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F411MR12W2M1HPB76BPSA1MOSFET Infineon Technologies |
9 |
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![]() 规格书 |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FF6MR12KM1HPHPSA1MOSFET Infineon Technologies |
10 |
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![]() 规格书 |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FF6MR20W2M1HB70BPSA1FF6MR20W2M1HB70BPSA1 Infineon Technologies |
15 |
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![]() 规格书 |
EasyPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 2000V (2kV) | 160A (Tj) | 8.1mOhm @ 160A, 18V | 5.15V @ 112mA | 780nC @ 3V | 24100pF @ 1.2kV | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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F3L6MR20W2M1HB70BPSA1F3L6MR20W2M1HB70BPSA1 Infineon Technologies |
15 |
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![]() 规格书 |
EasyPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel | Silicon Carbide (SiC) | 2000V (2kV) | 155A (Tj) | 8.7mOhm @ 100A, 18V | 5.15V @ 112mA | 297nC @ 18V | 24100pF @ 1.2kV | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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FF3MR12KM1HHPSA1MOSFET 2N-CH 1200V 190A AG62MMHB Infineon Technologies |
19 |
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![]() 规格书 |
CoolSiC™ | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 190A (Tc) | 4.44mOhm @ 280A, 18V | 5.1V @ 112mA | 800nC @ 18V | 24200pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-62MMHB |
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FF3MR12KM1HPHPSA1MOSFET 2N-CH 1200V 220A AG62MMHB Infineon Technologies |
13 |
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![]() 规格书 |
CoolSiC™ | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 220A | 4.44mOhm @ 280A, 18V | 5.1V @ 112mA | 800nC @ 18V | 24200pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-62MMHB |
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FF5MR20KM1HHPSA1MOSFET Infineon Technologies |
9 |
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![]() 规格书 |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |