上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VMO1600-02PMOSFET N-CH 200V 1900A Y3-LI IXYS |
0 | - |
|
规格书 |
PolarHT™ | Y3-Li | Tray | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 1900A (Tc) | 10V | 1.7mOhm @ 1600A, 10V | 5V @ 5mA | 2900 nC @ 10 V | ±20V | - | - | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Y3-Li |
|
IXFN90N170SKSICFET N-CH 1700V 90A SOT227B IXYS |
0 | - |
|
规格书 |
- | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 90A (Tc) | 20V | 35mOhm @ 100A, 20V | 4V @ 36mA | 376 nC @ 20 V | +20V, -5V | 7340 pF @ 1000 V | - | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
VMO550-01FMOSFET N-CH 100V 590A Y3-DCB IXYS |
0 | - |
|
- |
HiPerFET™ | Y3-DCB | Box | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 590A (Tc) | 10V | 2.1mOhm @ 500mA, 10V | 6V @ 110mA | 2000 nC @ 10 V | ±20V | 50000 pF @ 25 V | - | 2200W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Y3-DCB |
|
IXFH42N20MOSFET N-CH 200V 42A TO247AD IXYS |
0 | - |
|
规格书 |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 42A (Tc) | 10V | 60mOhm @ 500mA, 10V | 4V @ 4mA | 220 nC @ 10 V | ±20V | 4400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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IXFH58N20MOSFET N-CH 200V 58A TO247AD IXYS |
0 | - |
|
规格书 |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 58A (Tc) | 10V | 40mOhm @ 29A, 10V | 4V @ 4mA | 220 nC @ 10 V | ±20V | 4400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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IXFH40N30MOSFET N-CH 300V 40A TO247AD IXYS |
0 | - |
|
规格书 |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 40A (Tc) | 10V | 85mOhm @ 500mA, 10V | 4V @ 4mA | 200 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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IXFH24N50MOSFET N-CH 500V 24A TO247AD IXYS |
0 | - |
|
规格书 |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 24A (Tc) | 10V | 230mOhm @ 12A, 10V | 4V @ 4mA | 160 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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IXFH20N60MOSFET N-CH 600V 20A TO-247AD IXYS |
0 | - |
|
规格书 |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 350mOhm @ 10A, 10V | 4.5V @ 4mA | 170 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
|
|
IXFH11N80MOSFET N-CH 800V 11A TO247AD IXYS |
0 | - |
|
规格书 |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 950mOhm @ 500mA, 10V | 4.5V @ 4mA | 155 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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|
IXFH12N100MOSFET N-CH 1000V 12A TO247AD IXYS |
0 | - |
|
规格书 |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 12A (Tc) | 10V | 1.05Ohm @ 6A, 10V | 4.5V @ 4mA | 155 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
