上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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JANSR2N7269UMOSFET N-CH 200V 26A U1 Microsemi Corporation |
0 | - |
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规格书 |
- | 3-SMD, No Lead | Tray | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 26A (Tc) | 12V | 110mOhm @ 26A, 12V | 4V @ 1mA | 170 nC @ 12 V | ±20V | - | - | 150W (Tc) | -55°C ~ 150°C | Military | MIL-PRF-19500/603 | Surface Mount | U1 (SMD-1) |
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JANSF2N7383P CHANNEL MOSFET TO-257 Microsemi Corporation |
0 | - |
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- |
- | - | Bulk | Obsolete | - | - | - | 6.5A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - | - |
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APT11N80KC3GMOSFET N-CH 800V 11A TO220 Microsemi Corporation |
0 | - |
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规格书 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 450mOhm @ 7.1A, 10V | 3.9V @ 680µA | 60 nC @ 10 V | ±20V | 1585 pF @ 25 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 [K] |
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APT1204R7KFLLGMOSFET N-CH 1200V 3.5A TO220 Microsemi Corporation |
0 | - |
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规格书 |
POWER MOS 7® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1200 V | 3.5A (Tc) | 10V | 4.7Ohm @ 1.75A, 10V | 5V @ 1mA | 31 nC @ 10 V | ±30V | 715 pF @ 25 V | - | 135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 [K] |
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APT15F50KMOSFET N-CH 500V 15A TO220 Microsemi Corporation |
0 | - |
|
规格书 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Tc) | - | 390mOhm @ 7A, 10V | 5V @ 500µA | 55 nC @ 10 V | - | 2250 pF @ 25 V | - | 223W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 [K] |
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APT20F50BMOSFET N-CH 500V 20A TO247 Microsemi Corporation |
0 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 300mOhm @ 10A, 10V | 5V @ 500µA | 75 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT50M65B2LLGMOSFET N-CH 500V 67A T-MAX Microsemi Corporation |
0 | - |
|
规格书 |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 67A (Tc) | 10V | 65mOhm @ 33.5A, 10V | 5V @ 2.5mA | 141 nC @ 10 V | ±30V | 7010 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT5F100KMOSFET N-CH 1000V 5A TO220 Microsemi Corporation |
0 | - |
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规格书 |
POWER MOS 8™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 5A (Tc) | 10V | 2.8Ohm @ 3A, 10V | 5V @ 500µA | 43 nC @ 10 V | ±30V | 1409 pF @ 25 V | - | 225W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 [K] |
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APT6M100KMOSFET N-CH 1000V 6A TO220 Microsemi Corporation |
0 | - |
|
规格书 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 6A (Tc) | 10V | 2.5Ohm @ 3A, 10V | 5V @ 1mA | 43 nC @ 10 V | ±30V | 1410 pF @ 25 V | - | 225W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 [K] |
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APT7F80KMOSFET N-CH 800V 7A TO220 Microsemi Corporation |
0 | - |
|
规格书 |
POWER MOS 8™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 1.5Ohm @ 4A, 10V | 5V @ 500µA | 43 nC @ 10 V | ±30V | 1335 pF @ 25 V | - | 225W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 [K] |
