制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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APT50N60JCU2MOSFET N-CH 600V 52A SOT227 Microsemi Corporation |
0 | - |
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![]() 规格书 |
- | SOT-227-4, miniBLOC | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 52A (Tc) | 10V | 45mOhm @ 22.5A, 10V | 3.9V @ 3mA | 150 nC @ 10 V | ±20V | 7200 pF @ 25 V | - | 290W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT80SM120BSICFET N-CH 1200V 80A TO247 Microsemi Corporation |
0 | - |
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![]() 规格书 |
- | TO-247-3 | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 80A (Tc) | 20V | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 235 nC @ 20 V | +25V, -10V | - | - | 555W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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APT40SM120JMOSFET N-CH 1200V 32A SOT227 Microsemi Corporation |
0 | - |
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![]() 规格书 |
- | SOT-227-4, miniBLOC | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1200 V | 32A (Tc) | 20V | 100mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130 nC @ 20 V | +25V, -10V | 2560 pF @ 1000 V | - | 165W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT80SM120SSICFET N-CH 1200V 80A D3PAK Microsemi Corporation |
0 | - |
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![]() 规格书 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 80A (Tc) | 20V | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 235 nC @ 20 V | +25V, -10V | - | - | 625W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
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APTM120DA56T1GMOSFET N-CH 1200V 18A SP1 Microsemi Corporation |
0 | - |
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- | SP1 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1200 V | 18A (Tc) | 10V | 672mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 7736 pF @ 25 V | - | 390W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
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APTM120SK56T1GMOSFET N-CH 1200V 18A SP1 Microsemi Corporation |
0 | - |
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![]() 规格书 |
- | SP1 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1200 V | 18A (Tc) | 10V | 672mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 7736 pF @ 25 V | - | 390W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
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APT55M65JFLLMOSFET N-CH 550V 63A ISOTOP Microsemi Corporation |
0 | - |
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![]() 规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 63A (Tc) | 10V | 65mOhm @ 31.5A, 10V | 5V @ 5mA | 205 nC @ 10 V | ±30V | 9165 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APTM100DA33T1GMOSFET N-CH 1000V 23A SP1 Microsemi Corporation |
0 | - |
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![]() 规格书 |
- | SP1 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | 10V | 396mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 7868 pF @ 25 V | - | 390W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
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APTC60DAM35T1GMOSFET N-CH 600V 72A SP1 Microsemi Corporation |
0 | - |
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![]() 规格书 |
- | SP1 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 72A (Tc) | 10V | 35mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518 nC @ 10 V | ±20V | 14000 pF @ 25 V | - | 416W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
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APTC60SKM35T1GMOSFET N-CH 600V 72A SP1 Microsemi Corporation |
0 | - |
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![]() 规格书 |
- | SP1 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 72A (Tc) | 10V | 35mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518 nC @ 10 V | ±20V | 14000 pF @ 25 V | - | 416W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |