上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT6017LFLLGMOSFET N-CH 600V 35A TO264 Microsemi Corporation |
15 | - |
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规格书 |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 170mOhm @ 17.5A, 10V | 5V @ 2.5mA | 100 nC @ 10 V | ±30V | 4500 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT20N60BC3GMOSFET N-CH 600V 20.7A TO247-3 Microsemi Corporation |
0 | - |
|
规格书 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2440 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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APT17N80BC3GMOSFET N-CH 800V 17A TO247-3 Microsemi Corporation |
0 | - |
|
规格书 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 90 nC @ 10 V | ±20V | 2250 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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APT20N60SC3GMOSFET N-CH 600V 20.7A D3PAK Microsemi Corporation |
0 | - |
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规格书 |
CoolMOS™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2440 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT17N80SC3GMOSFET N-CH 800V 17A D3PAK Microsemi Corporation |
0 | - |
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规格书 |
CoolMOS™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 90 nC @ 10 V | ±20V | 2250 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT9F100SMOSFET N-CH 1000V 9A D3PAK Microsemi Corporation |
0 | - |
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规格书 |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 9A (Tc) | 10V | 1.6Ohm @ 5A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2606 pF @ 25 V | - | 337W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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MSC280SMA120SSICFET N-CH 1.2KV D3PAK Microsemi Corporation |
0 | - |
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规格书 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | - | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
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APT5020SVRGMOSFET N-CH 500V 26A D3PAK Microsemi Corporation |
0 | - |
|
- |
POWER MOS V® | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 200mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 4440 pF @ 25 V | - | - | - | - | - | Surface Mount | D3PAK |
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APT30M85BVFRGMOSFET N-CH 300V 40A TO247 Microsemi Corporation |
0 | - |
|
规格书 |
POWER MOS V® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 40A (Tc) | 10V | 85mOhm @ 500mA, 10V | 4V @ 1mA | 195 nC @ 10 V | ±30V | 4950 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT34F60BGMOSFET N-CH 600V 34A TO247-3 Microsemi Corporation |
0 | - |
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- |
POWER MOS 8™ | TO-247-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 210mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | ±30V | 6640 pF @ 25 V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
