上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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HUF75945G3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
3,000 | - |
|
规格书 |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 38A (Tc) | 10V | 71mOhm @ 38A, 10V | 4V @ 250µA | 280 nC @ 20 V | ±20V | 4023 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
|
HUF75939S3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
800 | - |
|
规格书 |
UltraFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 22A (Tc) | 10V | 125mOhm @ 22A, 10V | 4V @ 250µA | 152 nC @ 20 V | ±20V | 2200 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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HUFA75344G3MOSFET N-CH 55V 75A TO247-3 Fairchild Semiconductor |
89,420 | - |
|
规格书 |
UltraFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 210 nC @ 20 V | ±20V | 3200 pF @ 25 V | - | 285W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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FDS3570MOSFET N-CH 80V 9A 8SOIC Fairchild Semiconductor |
78,778 | - |
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规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 9A (Ta) | 6V, 10V | 20mOhm @ 9A, 10V | 4V @ 250µA | 76 nC @ 10 V | ±20V | 2750 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FDAF62N28MOSFET N-CH 280V 36A TO3PF Fairchild Semiconductor |
1,135 | - |
|
规格书 |
UniFET™ | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 280 V | 36A (Tc) | 10V | 51mOhm @ 18A, 10V | 5V @ 250µA | 100 nC @ 10 V | ±30V | 4630 pF @ 25 V | - | 165W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PF |
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FQAF70N15MOSFET N-CH 150V 44A TO3PF Fairchild Semiconductor |
925 | - |
|
规格书 |
QFET® | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 44A (Tc) | 10V | 28mOhm @ 22A, 10V | 4V @ 250µA | 175 nC @ 10 V | ±25V | 5400 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-3PF |
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FQPF90N10V2MOSFET N-CH 100V 90A TO220F Fairchild Semiconductor |
809 | - |
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规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 90A (Tc) | 10V | 10mOhm @ 45A, 10V | 4V @ 250µA | 191 nC @ 10 V | ±30V | 6150 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FQAF90N08MOSFET N-CH 80V 56A TO3PF Fairchild Semiconductor |
340 | - |
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规格书 |
QFET® | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 56A (Tc) | 10V | 16mOhm @ 28A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±25V | 3250 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-3PF |
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FCH130N60MOSFET N-CH 600V 28A TO247-3 Fairchild Semiconductor |
119 | - |
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规格书 |
SuperFET® II | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 130mOhm @ 14A, 10V | 3.5V @ 250µA | 70 nC @ 10 V | ±20V | 3590 pF @ 380 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
NDP7050MOSFET N-CH 50V 75A TO220-3 Fairchild Semiconductor |
6,047 | - |
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规格书 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 75A (Tc) | 10V | 13mOhm @ 40A, 10V | 4V @ 250µA | 115 nC @ 10 V | ±20V | 3600 pF @ 25 V | - | 150W (Tc) | -65°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
