制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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FDP030N06B1-ELEMENT, N-CHANNEL, MOS FET Fairchild Semiconductor |
800 | - |
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- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDS6672AMOSFET N-CH 30V 12.5A 8SOIC Fairchild Semiconductor |
224,608 | - |
|
![]() 规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12.5A (Ta) | 4.5V, 10V | 8mOhm @ 14A, 10V | 2V @ 250µA | 46 nC @ 4.5 V | ±12V | 5070 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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FDB2670MOSFET N-CH 200V 19A TO263AB Fairchild Semiconductor |
3,500 | - |
|
![]() 规格书 |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 19A (Ta) | 10V | 130mOhm @ 10A, 10V | 4.5V @ 250µA | 38 nC @ 10 V | ±20V | 1320 pF @ 100 V | - | 93W (Tc) | -65°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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HUF76443S3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
800 | - |
|
![]() 规格书 |
UltraFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 75A, 10V | 3V @ 250µA | 129 nC @ 10 V | ±16V | 4115 pF @ 25 V | - | 260W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FDS4080N3MOSFET N-CH 40V 13A 8SO Fairchild Semiconductor |
37,820 | - |
|
![]() 规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 13A (Ta) | 10V | 10.5mOhm @ 13A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±20V | 1750 pF @ 20 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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FDS3670MOSFET N-CH 100V 6.3A 8SOIC Fairchild Semiconductor |
25,000 | - |
|
![]() 规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 6.3A (Ta) | 6V, 10V | 32mOhm @ 6.3A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 2490 pF @ 50 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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FDS4072N7MOSFET N-CH 40V 12.4A 8SO Fairchild Semiconductor |
9,775 | - |
|
![]() 规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 12.4A (Ta) | 4.5V, 10V | 9mOhm @ 13.7A, 10V | 3V @ 250µA | 46 nC @ 4.5 V | ±12V | 4299 pF @ 20 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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FDS4080N7MOSFET N-CH 40V 13A 8SO Fairchild Semiconductor |
9,444 | - |
|
![]() 规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 13A (Ta) | 10V | 10mOhm @ 13A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±20V | 1750 pF @ 20 V | - | 3.9W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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HUF76443S3SN-CHANNEL POWER MOSFET Fairchild Semiconductor |
400 | - |
|
![]() 规格书 |
UltraFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 75A, 10V | 3V @ 250µA | 129 nC @ 10 V | ±16V | 4115 pF @ 25 V | - | 260W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FDI8441MOSFET N-CH 40V 26A/80A I2PAK Fairchild Semiconductor |
40,623 | - |
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![]() 规格书 |
PowerTrench® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 26A (Ta), 80A (Tc) | 10V | 2.7mOhm @ 80A, 10V | 4V @ 250µA | 280 nC @ 10 V | ±20V | 15000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |