上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQB6N60TMMOSFET N-CH 600V 6.2A D2PAK Fairchild Semiconductor |
18,992 | - |
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规格书 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.5Ohm @ 3.1A, 10V | 5V @ 250µA | 25 nC @ 10 V | ±30V | 1000 pF @ 25 V | - | 3.13W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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HUFA75639S3ST56A, 100V, 0.025OHM, N-CHANNEL, Fairchild Semiconductor |
1,559 | - |
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规格书 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) |
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HUF75637S3STMOSFET N-CH 100V 44A D2PAK Fairchild Semiconductor |
1,429 | - |
|
规格书 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 44A (Tc) | 10V | 30mOhm @ 44A, 10V | 4V @ 250µA | 108 nC @ 20 V | ±20V | 1700 pF @ 25 V | - | 155W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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HUF75639S3SMOSFET N-CH 100V 56A D2PAK Fairchild Semiconductor |
20,586 | - |
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规格书 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FDMS8570SDC28A, 25V, 0.0028OHM, N-CHANNEL, Fairchild Semiconductor |
8,053 | - |
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规格书 |
PowerTrench®, SyncFET™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 28A (Ta), 60A (Tc) | 4.5V, 10V | 2.8mOhm @ 28A, 10V | 2.2V @ 1mA | 42 nC @ 10 V | ±12V | 2825 pF @ 13 V | Schottky Diode (Body) | 3.3W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Dual Cool™56 |
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FCPF7N60NTPOWER FIELD-EFFECT TRANSISTOR, 6 Fairchild Semiconductor |
4,369 | - |
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规格书 |
SupreMOS™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 520mOhm @ 3.4A, 10V | 4V @ 250µA | 35.6 nC @ 10 V | ±30V | 960 pF @ 100 V | - | 30.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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HUF75344A3MOSFET N-CH 55V 75A TO3P Fairchild Semiconductor |
616 | - |
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规格书 |
UltraFET™ | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 208 nC @ 20 V | ±20V | 4855 pF @ 25 V | - | 288.5W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-3P |
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FQB25N33TMMOSFET N-CH 330V 25A D2PAK Fairchild Semiconductor |
15,900 | - |
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规格书 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 330 V | 25A (Tc) | 10V | 230mOhm @ 12.5A, 10V | 5V @ 250µA | 75 nC @ 15 V | ±30V | 2010 pF @ 25 V | - | 3.1W (Ta), 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FDMS0308CSMOSFET N-CH 30V 22A 8PQFN Fairchild Semiconductor |
9,000 | - |
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规格书 |
- | 8-PowerTDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta) | - | 3mOhm @ 21A, 10V | 3V @ 1mA | 66 nC @ 10 V | - | 4225 pF @ 15 V | - | 2.5W (Ta), 65W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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RFG40N10MOSFET N-CH 100V 40A TO247-3 Fairchild Semiconductor |
1,560 | - |
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规格书 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 10V | 40mOhm @ 40A, 10V | 4V @ 250µA | 300 nC @ 20 V | ±20V | - | - | 160W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
