制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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FQA12N60MOSFET N-CH 600V 12A TO3P Fairchild Semiconductor |
9,750 | - |
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![]() 规格书 |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 700mOhm @ 6A, 10V | 5V @ 250µA | 54 nC @ 10 V | ±30V | 1900 pF @ 25 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
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FDP2670MOSFET N-CH 200V 19A TO220-3 Fairchild Semiconductor |
4,242 | - |
|
![]() 规格书 |
PowerTrench® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 19A (Ta) | 10V | 130mOhm @ 10A, 10V | 4.5V @ 250µA | 38 nC @ 10 V | ±20V | 1320 pF @ 100 V | - | 93W (Tc) | -65°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQP4N90MOSFET N-CH 900V 4.2A TO220-3 Fairchild Semiconductor |
2,156 | - |
|
![]() 规格书 |
QFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 4.2A (Tc) | 10V | 3.3Ohm @ 2.1A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQAF7N90MOSFET N-CH 900V 5.2A TO3PF Fairchild Semiconductor |
877 | - |
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![]() 规格书 |
QFET® | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 5.2A (Tc) | 10V | 1.55Ohm @ 2.6A, 10V | 5V @ 250µA | 59 nC @ 10 V | ±30V | 2280 pF @ 25 V | - | 107W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PF |
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FCPF11N65TRANS MOSFET N-CH 600V 11A 3PIN( Fairchild Semiconductor |
415 | - |
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SuperFET™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | - | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 52 nC @ 10 V | - | 1490 pF @ 25 V | - | 36W (Tc) | - | - | - | Through Hole | TO-220F |
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HUF75542S3SN-CHANNEL POWER MOSFET Fairchild Semiconductor |
400 | - |
|
![]() 规格书 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 75A (Tc) | 10V | 14mOhm @ 75A, 10V | 4V @ 250µA | 180 nC @ 20 V | ±20V | 2750 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FQA27N25POWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |
237 | - |
|
![]() 规格书 |
QFET® | TO-3P-3, SC-65-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 27A (Tc) | 10V | 110mOhm @ 13.5A, 10V | 5V @ 250µA | 65 nC @ 10 V | ±30V | 2450 pF @ 25 V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PN |
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FDS7060N7MOSFET N-CH 30V 19A 8SO Fairchild Semiconductor |
2,154 | - |
|
![]() 规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta) | 4.5V, 10V | 5mOhm @ 19A, 10V | 3V @ 250µA | 56 nC @ 5 V | ±20V | 3274 pF @ 15 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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FQA7N90MOSFET N-CH 900V 7.4A TO3P Fairchild Semiconductor |
553 | - |
|
![]() 规格书 |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 7.4A (Tc) | 10V | 1.55Ohm @ 3.7A, 10V | 5V @ 250µA | 59 nC @ 10 V | ±30V | 2280 pF @ 25 V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
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FDB8442-F085-FS28A, 40V, 0.0029OHM, N-CHANNEL, Fairchild Semiconductor |
351 | - |
|
![]() 规格书 |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 28A (Ta), 80A (Tc) | 10V | 2.9mOhm @ 80A, 10V | 4V @ 250µA | 235 nC @ 10 V | ±20V | 12200 pF @ 25 V | - | 254W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |