制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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FDS7760AMOSFET N-CH 30V 15A 8SOIC Fairchild Semiconductor |
575,916 | - |
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![]() 规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 4.5V, 10V | 5.5mOhm @ 15A, 10V | 3V @ 250µA | 55 nC @ 5 V | ±20V | 3514 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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FDP8443MOSFET N-CH 40V 20A/80A TO220-3 Fairchild Semiconductor |
11,938 | - |
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![]() 规格书 |
PowerTrench® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 20A (Ta), 80A (Tc) | 10V | 3.5mOhm @ 80A, 10V | 4V @ 250µA | 185 nC @ 10 V | ±20V | 9310 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQI9N50CTUMOSFET N-CH 500V 9A I2PAK Fairchild Semiconductor |
39,199 | - |
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![]() 规格书 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 9A (Tc) | 10V | 800mOhm @ 4.5A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±30V | 1030 pF @ 25 V | - | 135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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FQP12N60MOSFET N-CH 600V 10.5A TO220-3 Fairchild Semiconductor |
9,664 | - |
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![]() 规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.5A (Tc) | 10V | 700mOhm @ 5.3A, 10V | 5V @ 250µA | 54 nC @ 10 V | ±30V | 1900 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQPF13N50MOSFET N-CH 500V 12.5A TO220F Fairchild Semiconductor |
2,475 | - |
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![]() 规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 12.5A (Tc) | 10V | 430mOhm @ 6.25A, 10V | 5V @ 250µA | 60 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 56W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FQAF6N90MOSFET N-CH 900V 4.5A TO3PF Fairchild Semiconductor |
1,785 | - |
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![]() 规格书 |
QFET® | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 4.5A (Tc) | 10V | 1.9Ohm @ 2.3A, 10V | 5V @ 250µA | 52 nC @ 10 V | ±30V | 1880 pF @ 25 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PF |
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FQAF27N25N-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,440 | - |
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![]() 规格书 |
QFET® | TO-3P-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 19A (Tc) | 10V | 110mOhm @ 9.5A, 10V | 5V @ 250µA | 65 nC @ 10 V | ±30V | 2450 pF @ 25 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PF |
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FDU6692N-CHANNEL POWER MOSFET Fairchild Semiconductor |
62,279 | - |
|
![]() 规格书 |
PowerTrench® | TO-251-3 Stub Leads, IPAK | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 54A (Ta) | 4.5V, 10V | 12mOhm @ 14A, 10V | 3V @ 250µA | 25 nC @ 5 V | ±16V | 2164 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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FDU6688MOSFET N-CH 30V 84A IPAK Fairchild Semiconductor |
8,025 | - |
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![]() 规格书 |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 84A (Ta) | 4.5V, 10V | 5mOhm @ 18A, 10V | 3V @ 250µA | 56 nC @ 5 V | ±20V | 3845 pF @ 15 V | - | 83W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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FQB12N60TMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
6,990 | - |
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![]() 规格书 |
QFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.5A (Tc) | 10V | 700mOhm @ 5.3A, 10V | 5V @ 250µA | 54 nC @ 10 V | ±30V | 1900 pF @ 25 V | - | 3.13W (Ta), 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |