上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQPF5N60CYDTUMOSFET N-CH 600V 4.5A TO220F-3 Fairchild Semiconductor |
2,878 | - |
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规格书 |
QFET® | TO-220-3 Full Pack, Formed Leads | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Tc) | 10V | 2.5Ohm @ 2.25A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±30V | 670 pF @ 25 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 (Y-Forming) |
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FDU7030BLMOSFET N-CH 30V 14A/56A IPAK Fairchild Semiconductor |
2,400 | - |
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规格书 |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 56A (Tc) | 4.5V, 10V | 9.5mOhm @ 14A, 10V | 3V @ 250µA | 20 nC @ 5 V | ±20V | 1425 pF @ 15 V | - | 2.8W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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HUF76129S3SN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,600 | - |
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规格书 |
UltraFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 56A (Tc) | 4.5V, 10V | 16mOhm @ 56A, 10V | 3V @ 250µA | 45 nC @ 10 V | ±20V | 1350 pF @ 25 V | - | 105W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FQP7P20MOSFET P-CH 200V 7.3A TO220-3 Fairchild Semiconductor |
1,518 | - |
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规格书 |
QFET® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 7.3A (Tc) | 10V | 690mOhm @ 3.65A, 10V | 5V @ 250µA | 25 nC @ 10 V | ±30V | 770 pF @ 25 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FDS6692SMALL SIGNAL N-CHANNEL MOSFET Fairchild Semiconductor |
1,349 | - |
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规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta) | 4.5V, 10V | 12mOhm @ 12A, 10V | 3V @ 250µA | 25 nC @ 5 V | ±16V | 2164 pF @ 15 V | - | 1W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-SOIC |
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FQPF6N40CFMOSFET N-CH 400V 6A TO220F Fairchild Semiconductor |
1,300 | - |
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规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 625 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FQP32N12V2MOSFET N-CH 120V 32A TO220-3 Fairchild Semiconductor |
1,244 | - |
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规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120 V | 32A (Tc) | 10V | 50mOhm @ 16A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1860 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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NDS8410AMOSFET N-CH 30V 10.8A 8SOIC Fairchild Semiconductor |
195,663 | - |
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规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 10.8A (Ta) | 4.5V, 10V | 12mOhm @ 10.8A, 10V | 3V @ 250µA | 22 nC @ 5 V | ±20V | 1620 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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FDU6680MOSFET N-CH 30V 12A/46A IPAK Fairchild Semiconductor |
82,141 | - |
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规格书 |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 46A (Tc) | 4.5V, 10V | 10mOhm @ 12A, 10V | 3V @ 250µA | 18 nC @ 5 V | ±20V | 1230 pF @ 15 V | - | 3.3W (Ta), 56W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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FDMC6296MOSFET N-CH 30V 11.5A 8MLP Fairchild Semiconductor |
20,197 | - |
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规格书 |
PowerTrench® | 8-PowerWDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.5A (Ta) | 4.5V, 10V | 10.5mOhm @ 11.5A, 10V | 3V @ 250µA | 19 nC @ 5 V | ±20V | 2141 pF @ 15 V | - | 900mW (Ta), 2.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-MLP (3.3x3.3) |
