上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDPF5N50TYDTUMOSFET N-CH 500V 5A TO220F Fairchild Semiconductor |
51,180 | - |
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规格书 |
UniFET™ | TO-220-3 Full Pack, Formed Leads | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 10V | 1.4Ohm @ 2.5A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 640 pF @ 25 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F (LG-Formed) |
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FDP6670ALMOSFET N-CH 30V 80A TO220-3 Fairchild Semiconductor |
26,591 | - |
|
规格书 |
PowerTrench® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Ta) | 4.5V, 10V | 6.5mOhm @ 40A, 10V | 3V @ 250µA | 33 nC @ 5 V | ±20V | 2440 pF @ 15 V | - | 68W (Tc) | -65°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FQD6P25TFMOSFET P-CH 250V 4.7A DPAK Fairchild Semiconductor |
21,864 | - |
|
规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 250 V | 4.7A (Tc) | 10V | 1.1Ohm @ 2.35A, 10V | 5V @ 250µA | 27 nC @ 10 V | ±30V | 780 pF @ 25 V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FQPF2N60CPOWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |
10,020 | - |
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规格书 |
QFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 4.7Ohm @ 1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±30V | 235 pF @ 25 V | - | 23W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FQU7N20TUMOSFET N-CH 200V 5.3A IPAK Fairchild Semiconductor |
9,024 | - |
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规格书 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.3A (Tc) | 10V | 690mOhm @ 2.65A, 10V | 5V @ 250µA | 10 nC @ 10 V | ±30V | 400 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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FQD60N03LTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
7,500 | - |
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规格书 |
QFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 5V, 10V | 23mOhm @ 30A, 10V | 3V @ 250µA | 46 nC @ 10 V | ±16V | 900 pF @ 15 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FQB19N10LTMMOSFET N-CH 100V 19A D2PAK Fairchild Semiconductor |
5,002 | - |
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规格书 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Tc) | 5V, 10V | 100mOhm @ 9.5A, 10V | 2V @ 250µA | 18 nC @ 5 V | ±20V | 870 pF @ 25 V | - | 3.75W (Ta), 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FDB20AN06A0MOSFET N-CH 60V 9A/45A TO263AB Fairchild Semiconductor |
4,310 | - |
|
规格书 |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 9A (Ta), 45A (Tc) | 10V | 20mOhm @ 45A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 950 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
FDU8876MOSFET N-CH 30V 15A/73A IPAK Fairchild Semiconductor |
2,750 | - |
|
规格书 |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta), 73A (Tc) | 4.5V, 10V | 8.2mOhm @ 35A, 10V | 2.5V @ 250µA | 47 nC @ 10 V | ±20V | 1700 pF @ 15 V | - | 70W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
HUF76113SK8N-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,960 | - |
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规格书 |
UltraFET™ | 8-VFSOP (0.091", 2.30mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.5A (Ta) | 4.5V, 10V | 30mOhm @ 6.5A, 10V | 3V @ 250µA | 21 nC @ 10 V | ±20V | 585 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | US8 |
