上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQB8N25TMMOSFET N-CH 250V 8A D2PAK Fairchild Semiconductor |
15,754 | - |
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规格书 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 8A (Tc) | 10V | 550mOhm @ 4A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 530 pF @ 25 V | - | 3.13W (Ta), 87W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRFW730BTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
12,957 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 5.5A (Tc) | 10V | 1Ohm @ 2.75A, 10V | 4V @ 250µA | 33 nC @ 10 V | ±30V | 1000 pF @ 25 V | - | 3.13W (Ta), 73W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
HP4410DYTN-CHANNEL POWER MOSFET Fairchild Semiconductor |
12,742 | - |
|
规格书 |
UltraFET® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 135mOhm @ 10A, 10V | 1V @ 250µA | 60 nC @ 10 V | ±16V | 1600 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FQP3N90MOSFET N-CH 900V 3.6A TO220-3 Fairchild Semiconductor |
10,000 | - |
|
规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 3.6A (Tc) | 10V | 4.25Ohm @ 1.8A, 10V | 5V @ 250µA | 26 nC @ 10 V | ±30V | 910 pF @ 25 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FDM606PMOSFET P-CH 20V 6.8A 8MLP Fairchild Semiconductor |
9,587 | - |
|
规格书 |
PowerTrench® | 8-SMD, Flat Lead Exposed Pad | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 6.8A (Tc) | 1.8V, 4.5V | 30mOhm @ 6.8A, 4.5V | 1.5V @ 250µA | 30 nC @ 4.5 V | ±8V | 2200 pF @ 10 V | - | 1.92W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-MLP, MicroFET (3x2) |
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FQPF6N50MOSFET N-CH 500V 3.6A TO220F Fairchild Semiconductor |
5,884 | - |
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规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.6A (Tc) | 10V | 1.3Ohm @ 1.8A, 10V | 5V @ 250µA | 22 nC @ 10 V | ±30V | 790 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FQPF6N40CMOSFET N-CH 400V 6A TO220F Fairchild Semiconductor |
5,450 | - |
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规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 625 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FQP16N15MOSFET N-CH 150V 16.4A TO220-3 Fairchild Semiconductor |
3,866 | - |
|
规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 16.4A (Tc) | 10V | 160mOhm @ 8.2A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±25V | 910 pF @ 25 V | - | 108W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FDU6030BLMOSFET N-CH 30V 10A/42A IPAK Fairchild Semiconductor |
3,525 | - |
|
规格书 |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta), 42A (Tc) | 4.5V, 10V | 16mOhm @ 10A, 10V | 3V @ 250µA | 31 nC @ 10 V | ±20V | 1143 pF @ 15 V | - | 3.8W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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FQU2N80TUMOSFET N-CH 800V 1.8A IPAK Fairchild Semiconductor |
3,037 | - |
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规格书 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.8A (Tc) | 10V | 6.3Ohm @ 900mA, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 550 pF @ 25 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
