上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RFD8P06LEP-CHANNEL POWER MOSFET Fairchild Semiconductor |
7,200 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 8A (Tc) | 4.5V, 5V | 300mOhm @ 8A, 5V | 2V @ 250µA | 30 nC @ 10 V | ±10V | 675 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
|
HUFA75321D3MOSFET N-CH 55V 20A IPAK Fairchild Semiconductor |
6,970 | - |
|
规格书 |
UltraFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 20A (Tc) | 10V | 36mOhm @ 20A, 10V | 4V @ 250µA | 44 nC @ 20 V | ±20V | 680 pF @ 25 V | - | 93W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
|
SFU9130TUP-CHANNEL POWER MOSFET Fairchild Semiconductor |
5,040 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 9.8A (Tc) | 10V | 300mOhm @ 4.9A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±30V | 1035 pF @ 25 V | - | 2.5W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
|
HUF76107D3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
4,730 | - |
|
规格书 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 4.5V, 10V | 52mOhm @ 20A, 10V | 3V @ 250µA | 10.3 nC @ 10 V | ±20V | 315 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
|
HUF75307D3ST_NLN-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,597 | - |
|
规格书 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 15A (Tc) | 10V | 90mOhm @ 15A, 10V | 4V @ 250µA | 20 nC @ 20 V | ±20V | 250 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
SSP1N50BN-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,000 | - |
|
规格书 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 520 V | 1.5A (Tc) | 10V | 5.3Ohm @ 750mA, 10V | 4V @ 250µA | 11 nC @ 10 V | ±30V | 340 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
|
ISL9N310AD3ST_NLN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,125 | - |
|
规格书 |
UltraFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 10Ohm @ 35A, 10A | 3V @ 250µA | 48 nC @ 10 V | ±20V | 1800 pF @ 15 V | - | 70W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FQD630TFMOSFET N-CH 200V 7A DPAK Fairchild Semiconductor |
207,503 | - |
|
规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 7A (Tc) | 10V | 400mOhm @ 3.5A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±25V | 550 pF @ 25 V | - | 2.5W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDU6612AMOSFET N-CH 30V 9.5A/30A IPAK Fairchild Semiconductor |
44,990 | - |
|
规格书 |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.5A (Ta), 30A (Tc) | 4.5V, 10V | 20mOhm @ 9.5A, 10V | 3V @ 250µA | 9.4 nC @ 5 V | ±20V | 660 pF @ 15 V | - | 2.8W (Ta), 36W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
|
FQD20N06LETMMOSFET N-CH 60V 17.2A DPAK Fairchild Semiconductor |
44,818 | - |
|
规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 17.2A (Tc) | 5V, 10V | 60mOhm @ 8.6A, 10V | 2.5V @ 250µA | 13 nC @ 5 V | ±20V | 665 pF @ 25 V | - | 2.5W (Ta), 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
