上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FQPF7N20MOSFET N-CH 200V 4.8A TO220F Fairchild Semiconductor |
3,159 | - |
|
规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.8A (Tc) | 10V | 690mOhm @ 2.4A, 10V | 5V @ 250µA | 10 nC @ 10 V | ±30V | 400 pF @ 25 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FQI13N06TUMOSFET N-CH 60V 13A I2PAK Fairchild Semiconductor |
2,534 | - |
|
规格书 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 13A (Tc) | 10V | 135mOhm @ 6.5A, 10V | 4V @ 250µA | 7.5 nC @ 10 V | ±25V | 310 pF @ 25 V | - | 3.75W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
|
FQPF13N06MOSFET N-CH 60V 9.4A TO220F Fairchild Semiconductor |
2,334 | - |
|
规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 9.4A (Tc) | 10V | 135mOhm @ 4.7A, 10V | 4V @ 250µA | 7.5 nC @ 10 V | ±25V | 310 pF @ 25 V | - | 24W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FQP17N08MOSFET N-CH 80V 16.5A TO220-3 Fairchild Semiconductor |
2,331 | - |
|
规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 16.5A (Tc) | 10V | 115mOhm @ 8.25A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±25V | 450 pF @ 25 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
|
FQPF7N20LMOSFET N-CH 200V 5A TO220F Fairchild Semiconductor |
1,711 | - |
|
规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5A (Tc) | 5V, 10V | 750mOhm @ 2.5A, 10V | 2V @ 250µA | 9 nC @ 5 V | ±20V | 500 pF @ 25 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
SSS4N60BTTRANS MOSFET N-CH 600V 4A 3PIN(3 Fairchild Semiconductor |
1,534 | - |
|
规格书 |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tj) | 10V | 2.5Ohm @ 2A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±30V | 920 pF @ 25 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
HUF75321S3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,303 | - |
|
规格书 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 35A (Tc) | 10V | 34mOhm @ 35A, 10V | 4V @ 250µA | 44 nC @ 20 V | ±20V | 680 pF @ 25 V | - | 93W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
FQD17N08LTFMOSFET N-CH 80V 12.9A TO252 Fairchild Semiconductor |
1,207 | - |
|
规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 12.9A (Tc) | 5V, 10V | 100mOhm @ 6.45A, 10V | 2V @ 250µA | 11.5 nC @ 5 V | ±20V | 520 pF @ 25 V | - | 2.5W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
|
FQP6N25MOSFET N-CH 250V 5.5A TO220-3 Fairchild Semiconductor |
1,189 | - |
|
规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 5.5A (Tc) | 10V | 1Ohm @ 2.75A, 10V | 5V @ 250µA | 8.5 nC @ 10 V | ±30V | 300 pF @ 25 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FDZ3N513ZTMOSFET N-CH 30V 1.1A 4WLCSP Fairchild Semiconductor |
25,469 | - |
|
规格书 |
- | 4-XFBGA, WLCSP | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.1A | - | 462mOhm @ 300mA, 4.5V | 1.5V @ 250µA | 1 nC @ 4.5 V | +5.5V, -300mV | 85 pF @ 15 V | Schottky Diode (Isolated) | 1W (Ta) | -55°C ~ 125°C (TJ) | - | - | Surface Mount | 4-WLCSP (1x1) |
