上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STP10N62K3MOSFET N-CH 620V 8.4A TO220AB STMicroelectronics |
812 | - |
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规格书 |
SuperMESH3™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 620 V | 8.4A (Tc) | 10V | 750mOhm @ 4A, 10V | 4.5V @ 100µA | 42 nC @ 10 V | ±30V | 1250 pF @ 50 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STW21N65M5MOSFET N-CH 650V 17A TO247-3 STMicroelectronics |
74 | - |
|
规格书 |
MDmesh™ V | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 17A (Tc) | 10V | 190mOhm @ 8.5A, 10V | 5V @ 250µA | 50 nC @ 10 V | ±25V | 1950 pF @ 100 V | - | 125W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STI24N60M6MOSFET N-CH 600V I2PAK STMicroelectronics |
90 | - |
|
规格书 |
MDmesh™ M6 | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tj) | 10V | 190mOhm @ 8.5A, 10V | 4.75V @ 250µA | 23 nC @ 10 V | ±25V | 960 pF @ 100 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
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STP210N75F6MOSFET N-CH 75V 120A TO220 STMicroelectronics |
46 | - |
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规格书 |
DeepGATE™, STripFET™ VI | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 3.7mOhm @ 60A, 10V | 4V @ 250µA | 171 nC @ 10 V | ±20V | 11800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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STWA65N60DM6MOSFET N-CH 600V 38A TO247 STMicroelectronics |
35 | - |
|
规格书 |
MDmesh™ DM6 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | - | - | - | - | ±25V | - | - | - | - | - | - | Through Hole | TO-247 Long Leads |
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STL19N60DM2MOSFET N-CH 600V 11A PWRFLAT HV STMicroelectronics |
99 | - |
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规格书 |
MDmesh™ DM2 | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 320mOhm @ 5.5A, 10V | 5V @ 250µA | 21 nC @ 10 V | ±25V | - | - | 90W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (8x8) HV |
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STH110N10F7-2MOSFET N CH 100V 110A H2PAK STMicroelectronics |
90 | - |
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规格书 |
DeepGATE™, STripFET™ VII | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 10V | 6.5mOhm @ 55A, 10V | 4.5V @ 250µA | 72 nC @ 10 V | ±20V | 5117 pF @ 50 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | H2PAK-2 |
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STP13NM60NDMOSFET N-CH 600V 11A TO220 STMicroelectronics |
53 | - |
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规格书 |
FDmesh™ II | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 24.5 nC @ 10 V | ±25V | 845 pF @ 50 V | - | 109W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STF16N50M2MOSFET N-CH 500V 13A TO220 STMicroelectronics |
710 | - |
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规格书 |
MDmesh™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 4V @ 250µA | 19.5 nC @ 10 V | ±25V | 710 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
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STI22NM60NMOSFET N-CH 600V 16A I2PAK STMicroelectronics |
31 | - |
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规格书 |
MDmesh™ II | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 220mOhm @ 8A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±30V | 1330 pF @ 50 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
