上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STD11N65M2MOSFET N-CH 650V 7A DPAK STMicroelectronics |
72 | - |
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规格书 |
MDmesh™ II Plus | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 670mOhm @ 3.5A, 10V | 4V @ 250µA | 12.5 nC @ 10 V | ±25V | 410 pF @ 100 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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STF7N65M2MOSFET N-CH 650V 5A TO220FP STMicroelectronics |
63 | - |
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规格书 |
MDmesh™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 5A (Tc) | 10V | 1.15Ohm @ 2.5A, 10V | 4V @ 250µA | 9 nC @ 10 V | ±25V | 270 pF @ 100 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STP90N6F6MOSFET N-CH 60V 84A TO220 STMicroelectronics |
842 | - |
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规格书 |
DeepGATE™, STripFET™ VI | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 84A (Tc) | 10V | 6.8mOhm @ 38.5A, 10V | 4V @ 250µA | 74.9 nC @ 10 V | ±20V | 4295 pF @ 25 V | - | 136W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-220 |
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STP3N62K3MOSFET N-CH 620V 2.7A TO220AB STMicroelectronics |
338 | - |
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规格书 |
SuperMESH3™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 620 V | 2.7A (Tc) | 10V | 2.5Ohm @ 1.4A, 10V | 4.5V @ 50µA | 13 nC @ 10 V | ±30V | 385 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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STP1N105K3MOSFET N-CH 1050V 1.4A TO220 STMicroelectronics |
465 | - |
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规格书 |
SuperMESH3™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1050 V | 1.4A (Tc) | 10V | 11Ohm @ 600mA, 10V | 4.5V @ 50µA | 13 nC @ 10 V | ±30V | 180 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STD180N4F6MOSFET N-CH 40V 80A DPAK STMicroelectronics |
149 | - |
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STripFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 2.8mOhm @ 40A, 10V | 4.5V @ 250µA | 130 nC @ 10 V | ±20V | 7735 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
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STH160N4LF6-2MOSFET N-CH 40V 120A H2PAK-2 STMicroelectronics |
622 | - |
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规格书 |
DeepGATE™, STripFET™ VI | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 5V, 10V | 2.2mOhm @ 60A, 10V | 1V @ 250µA (Min) | 181 nC @ 10 V | ±20V | 8130 pF @ 20 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | H2PAK-2 |
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STP4N80K5MOSFET N-CH 800V 3A TO220 STMicroelectronics |
202 | - |
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规格书 |
SuperMESH5™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Tc) | 10V | 2.5Ohm @ 1.5A, 10V | 5V @ 100µA | 10.5 nC @ 10 V | ±30V | 175 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STFU13N65M2MOSFET N-CH 650V 10A TO220FP STMicroelectronics |
965 | - |
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规格书 |
MDmesh™ M2 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 430mOhm @ 5A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±25V | 590 pF @ 100 V | - | 25W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STP9N65M2MOSFET N-CH 650V 5A TO220 STMicroelectronics |
963 | - |
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规格书 |
MDmesh™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 5A (Tc) | 10V | 900mOhm @ 2.5A, 10V | 4V @ 250µA | 10 nC @ 10 V | ±25V | 315 pF @ 100 V | - | 60W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
