制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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STP80N240K6N-CHANNEL 800 V, 197 MOHM TYP., STMicroelectronics |
973 | - |
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![]() 规格书 |
MDmesh™ K6 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 16A (Tc) | 10V | 220mOhm @ 7A, 10V | 4V @ 100µA | 25.9 nC @ 10 V | ±30V | 1350 pF @ 100 V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STFU13N80K5MOSFET N-CH 800V 12A TO220FP STMicroelectronics |
899 | - |
|
![]() 规格书 |
MDmesh™ K5 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 12A (Tc) | 10V | 450mOhm @ 6A, 10V | 5V @ 100µA | 29 nC @ 10 V | ±30V | 870 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STP25N80K5MOSFET N-CH 800V 19.5A TO220 STMicroelectronics |
1,000 | - |
|
![]() 规格书 |
SuperMESH5™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 19.5A (Tc) | 10V | 260mOhm @ 19.5A, 10V | 5V @ 100µA | 40 nC @ 10 V | ±30V | 1600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STH150N10F7-2MOSFET N-CH 100V 110A H2PAK-2 STMicroelectronics |
760 | - |
|
![]() 规格书 |
DeepGATE™, STripFET™ VII | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 10V | 3.9mOhm @ 55A, 10V | 4.5V @ 250µA | 117 nC @ 10 V | ±20V | 8115 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | H2PAK-2 |
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STL26N60DM6MOSFET N-CH 600V 15A PWRFLAT HV STMicroelectronics |
2,997 | - |
|
![]() 规格书 |
MDmesh™ DM6 | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 215mOhm @ 7.5A, 10V | 4.75V @ 250µA | 24 nC @ 10 V | ±25V | 940 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (8x8) HV |
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STF33N65M2MOSFET N-CH 650V 24A TO220FP STMicroelectronics |
180 | - |
|
![]() 规格书 |
MDmesh™ M2 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 140mOhm @ 12A, 10V | 4V @ 250µA | 41.5 nC @ 10 V | ±25V | 1790 pF @ 100 V | - | 34W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STW10N95K5MOSFET N-CH 950V 8A TO247 STMicroelectronics |
461 | - |
|
![]() 规格书 |
SuperMESH5™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 8A (Tc) | 10V | 800mOhm @ 4A, 10V | 5V @ 100µA | 22 nC @ 10 V | ±30V | 630 pF @ 100 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STP12NK80ZMOSFET N-CH 800V 10.5A TO220AB STMicroelectronics |
2,626 | - |
|
![]() 规格书 |
SuperMESH™ | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 800 V | 10.5A (Tc) | 10V | 750mOhm @ 5.25A, 10V | 4.5V @ 100µA | 87 nC @ 10 V | ±30V | 2620 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STW12NK80ZMOSFET N-CH 800V 10.5A TO247-3 STMicroelectronics |
295 | - |
|
![]() 规格书 |
SuperMESH™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 10.5A (Tc) | 10V | 750mOhm @ 5.25A, 10V | 4.5V @ 100µA | 87 nC @ 10 V | ±30V | 2620 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STP270N8F7MOSFET N CH 80V 180A TO220 STMicroelectronics |
1,006 | - |
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![]() 规格书 |
DeepGATE™, STripFET™ VII | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 180A (Tc) | 10V | 2.5mOhm @ 90A, 10V | 4V @ 250µA | 193 nC @ 10 V | ±20V | 13600 pF @ 50 V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |