上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SCTH70N120G2V-7SILICON CARBIDE POWER MOSFET 120 STMicroelectronics |
0 | - |
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规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 90A (Tc) | 18V | 30mOhm @ 50A, 18V | 4.9V @ 1mA | 150 nC @ 18 V | +22V, -10V | 3540 pF @ 800 V | - | 469W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | H2PAK-7 |
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SCTL90N65G2VSILICON CARBIDE POWER MOSFET 650 STMicroelectronics |
1 | - |
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规格书 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 40A (Tc) | 18V | 24mOhm @ 40A, 18V | 5V @ 1mA | 157 nC @ 18 V | +22V, -10V | 3380 pF @ 400 V | - | 935W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerFlat™ (8x8) HV |
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STE70NM60MOSFET N-CH 600V 70A ISOTOP STMicroelectronics |
0 | - |
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规格书 |
MDmesh™ | ISOTOP | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 55mOhm @ 30A, 10V | 5V @ 250µA | 266 nC @ 10 V | ±30V | 7300 pF @ 25 V | - | 600W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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STE40NK90ZDMOSFET N-CH 900V 40A ISOTOP STMicroelectronics |
0 | - |
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规格书 |
SuperFREDmesh™ | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 40A (Tc) | 10V | 180mOhm @ 20A, 10V | 4.5V @ 150µA | 826 nC @ 10 V | ±30V | 25000 pF @ 25 V | - | 600W (Tc) | -65°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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STD19NF20MOSFET N-CHANNEL 200V 15A DPAK STMicroelectronics |
0 | - |
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规格书 |
MESH OVERLAY™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 15A (Tc) | 10V | 160mOhm @ 7.5A, 10V | 4V @ 250µA | 24 nC @ 10 V | ±20V | 800 pF @ 25 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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STD1HNC60T4MOSFET N-CH 600V 2A DPAK STMicroelectronics |
0 | - |
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规格书 |
PowerMESH™ II | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 5Ohm @ 1A, 10V | 4V @ 250µA | 15.5 nC @ 10 V | ±30V | 228 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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STP19NB20MOSFET N-CH 200V 19A TO220AB STMicroelectronics |
0 | - |
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规格书 |
PowerMESH™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 19A (Tc) | 10V | 180mOhm @ 9.5A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1000 pF @ 25 V | - | 125W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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STY34NB50MOSFET N-CH 500V 34A MAX247 STMicroelectronics |
0 | - |
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规格书 |
PowerMESH™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 34A (Tc) | 10V | 130mOhm @ 17A, 10V | 5V @ 250µA | 223 nC @ 10 V | ±30V | 9100 pF @ 25 V | - | 450W (Tc) | 150°C (TJ) | - | - | Through Hole | MAX247™ |
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STP12PF06MOSFET P-CH 60V 12A TO220AB STMicroelectronics |
0 | - |
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规格书 |
STripFET™ II | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 10V | 200mOhm @ 10A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±20V | 850 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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IRF840MOSFET N-CH 500V 8A TO220AB STMicroelectronics |
0 | - |
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规格书 |
PowerMESH™ II | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 3.5A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±20V | 832 pF @ 25 V | - | 125W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
