上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STE139N65M5MOSFET N-CH 650V 130A ISOTOP STMicroelectronics |
0 | - |
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- |
MDmesh™ | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 130A (Tc) | 10V | 17mOhm @ 65A, 10V | 5V @ 250µA | 363 nC @ 10 V | ±25V | 15600 pF @ 100 V | - | 672W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP |
|
SCTH50N120-7SICFET N-CH 1200V 65A H2PAK-7 STMicroelectronics |
0 | - |
|
规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A | 20V | 69mOhm @ 40A, 20V | 5.1V @ 1mA | 122 nC @ 20 V | +22V, -10V | 1900 pF @ 400 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | H2PAK-7 |
|
SCT30N120HSICFET N-CH 1200V 40A H2PAK-2 STMicroelectronics |
0 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 20V | 100mOhm @ 20A, 20V | 3.5V @ 1mA | 105 nC @ 20 V | +25V, -10V | 1700 pF @ 400 V | - | 270W (Tc) | -55°C ~ 200°C (TJ) | - | - | Surface Mount | H2PAK-2 |
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STE110NS20FDMOSFET N-CH 200V 110A ISOTOP STMicroelectronics |
0 | - |
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规格书 |
MESH OVERLAY™ | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 110A (Tc) | 10V | 24mOhm @ 50A, 10V | 4V @ 250µA | 504 nC @ 10 V | ±20V | 7900 pF @ 25 V | - | 500W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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STE250NS10MOSFET N-CH 100V 220A ISOTOP STMicroelectronics |
0 | - |
|
规格书 |
STripFET™ | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 220A (Tc) | 10V | 5.5mOhm @ 125A, 10V | 4V @ 250µA | 900 nC @ 10 V | ±20V | 31000 pF @ 25 V | - | 500W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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SCT015W120G3-4AGTO247-4 STMicroelectronics |
0 | - |
|
规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 129A (Tc) | 15V, 18V | 17.5mOhm @ 60A, 18V | 4.2V @ 10mA | 167 nC @ 18 V | +22V, -10V | 3512 pF @ 800 V | - | 673W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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STE140NF20DMOSFET N-CH 200V 140A ISOTOP STMicroelectronics |
0 | - |
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规格书 |
STripFET™ II | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 140A (Tc) | 10V | 12mOhm @ 70A, 10V | 4V @ 250µA | 338 nC @ 10 V | ±20V | 11100 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP |
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STE70NM50MOSFET N-CH 500V 70A ISOTOP STMicroelectronics |
0 | - |
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规格书 |
MDmesh™ | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 70A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 266 nC @ 10 V | ±30V | 7500 pF @ 25 V | - | 600W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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STE26NA90MOSFET N-CH 900V 26A ISOTOP STMicroelectronics |
0 | - |
|
规格书 |
- | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 26A (Tc) | 10V | 300mOhm @ 13A, 10V | 3.75V @ 1mA | 660 nC @ 10 V | ±30V | 1770 pF @ 25 V | - | 450W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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STE180NE10MOSFET N-CH 100V 180A ISOTOP STMicroelectronics |
0 | - |
|
规格书 |
STripFET™ | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 6Ohm @ 40A, 10V | 4V @ 250µA | 795 nC @ 10 V | ±20V | 21000 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
