上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STD8NM60N-1MOSFET N-CH 600V 7A IPAK STMicroelectronics |
0 | - |
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规格书 |
MDmesh™ II | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 650mOhm @ 3.5A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±25V | 560 pF @ 50 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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STL220N3LLH7MOSFET N-CH 30V 220A POWERFLAT STMicroelectronics |
0 | - |
|
规格书 |
DeepGATE™, STripFET™ VII | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 220A (Tc) | 4.5V, 10V | 1.1mOhm @ 25A, 10V | 2.2V @ 250µA | 46 nC @ 4.5 V | ±20V | 8650 pF @ 25 V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (5x6) |
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STP8NM50MOSFET N-CH 550V 8A TO220AB STMicroelectronics |
0 | - |
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规格书 |
MDmesh™ II | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 8A (Tc) | 10V | 800mOhm @ 2.5A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 415 pF @ 25 V | - | 100W (Tc) | -65°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STP90N55F4MOSFET N-CH 55V 90A TO220AB STMicroelectronics |
0 | - |
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规格书 |
DeepGATE™, STripFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 90A (Tc) | 10V | 8mOhm @ 45A, 10V | 4V @ 250µA | 90 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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STU8N65M5MOSFET N-CH 650V 7A IPAK STMicroelectronics |
0 | - |
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规格书 |
MDmesh™ V | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±25V | 690 pF @ 100 V | - | 70W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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STS26N3LLH6MOSFET N-CH 30V 26A 8SO STMicroelectronics |
0 | - |
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规格书 |
DeepGATE™, STripFET™ VI | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 26A (Tc) | 4.5V, 10V | 4.4mOhm @ 13A, 10V | 1V @ 250µA | 40 nC @ 4.5 V | ±20V | 4040 pF @ 25 V | - | 2.7W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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STD13N50DM2AGPOWER TRANSISTORS STMicroelectronics |
0 | - |
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规格书 |
- | - | Tape & Reel (TR) | Active | - | - | - | 11A (Tc) | - | - | - | - | ±25V | - | - | - | - | - | - | - | - |
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STP16N65M2MOSFET N-CH 650V 11A TO220 STMicroelectronics |
0 | - |
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规格书 |
MDmesh™ M2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 19.5 nC @ 10 V | ±25V | 718 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STB16NS25T4MOSFET N-CH 250V 16A D2PAK STMicroelectronics |
0 | - |
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规格书 |
MESH OVERLAY™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 16A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 1270 pF @ 25 V | - | 140W (Tc) | 175°C (TJ) | - | - | Surface Mount | D2PAK |
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STP75NS04ZMOSFET N-CH 33V 80A TO220AB STMicroelectronics |
0 | - |
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规格书 |
MESH OVERLAY™ III | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 33 V | 80A (Tc) | 10V | 11mOhm @ 40A, 10V | 4V @ 250µA | 50 nC @ 10 V | Clamped | 1860 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
