上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STP90N4F3MOSFET N-CH 40V 80A TO220AB STMicroelectronics |
0 | - |
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规格书 |
STripFET™ III | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 6.5mOhm @ 40A, 10V | 4V @ 250µA | 54 nC @ 10 V | ±20V | 2200 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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STD9N80K5MOSFET N-CHANNEL 800V 7A DPAK STMicroelectronics |
0 | - |
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规格书 |
MDmesh™ K5 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 900mOhm @ 3.5A, 10V | 5V @ 100µA | 12 nC @ 10 V | ±30V | 340 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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STP60NE06-16MOSFET N-CH 60V 60A TO220AB STMicroelectronics |
0 | - |
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规格书 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 10V | 16mOhm @ 30A, 10V | 4V @ 250µA | 160 nC @ 10 V | ±20V | 6200 pF @ 25 V | - | 150W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-220 |
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STN3PF06MOSFET P-CH 60V 2.5A SOT223 STMicroelectronics |
0 | - |
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规格书 |
STripFET™ II | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 2.5A (Tc) | 10V | 220mOhm @ 1.5A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±20V | 850 pF @ 25 V | - | 2.5W (Tc) | -65°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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STP16N60M2MOSFET N-CH 600V 12A TO220 STMicroelectronics |
0 | - |
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规格书 |
MDmesh™ M2 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 320mOhm @ 6A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±25V | 700 pF @ 100 V | - | 110W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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STL175N4LF8AGPOWERFLAT 5X6 WF STMicroelectronics |
0 | - |
|
规格书 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STB120N10F4MOSFET N-CH 100V D2PAK STMicroelectronics |
0 | - |
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规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | - | - | - | 120A (Tc) | 10V | - | - | - | ±20V | - | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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STP12N65M2POWER MOSFET STMicroelectronics |
0 | - |
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规格书 |
MDmesh™ DM2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 8A (Tc) | 0V, 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 16.7 nC @ 10 V | ±25V | 535 pF @ 100 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STW13N60M2MOSFET N-CH 600V 11A TO247 STMicroelectronics |
0 | - |
|
规格书 |
MDmesh™ II Plus | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±25V | 580 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STD8NM60NMOSFET N-CH 600V 7A DPAK STMicroelectronics |
0 | - |
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规格书 |
MDmesh™ II | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 650mOhm @ 3.5A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±25V | 560 pF @ 50 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
