上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2SK3850-TL-ENCH 10V DRIVE SERIES onsemi |
39,900 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NTTFS4932NTAGMOSFET N-CH 30V 11A/79A 8WDFN onsemi |
0 | - |
|
规格书 |
- | 8-PowerWDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta), 79A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.2V @ 250µA | 46.5 nC @ 10 V | ±20V | 3111 pF @ 15 V | - | 850mW (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-WDFN (3.3x3.3) |
|
MPF6659RLRASMALL SIGNAL N-CHANNEL MOSFET onsemi |
8,394 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FQU9N25TUMOSFET N-CH 250V 7.4A IPAK onsemi |
0 | - |
|
规格书 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 7.4A (Tc) | 10V | 420mOhm @ 3.7A, 10V | 5V @ 250µA | 20 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
|
NTD4854N-35GMOSFET N-CH 25V 15.7A/128A IPAK onsemi |
0 | - |
|
规格书 |
- | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 15.7A (Ta), 128A (Tc) | 4.5V, 10V | 3.6mOhm @ 30A, 10V | 2.5V @ 250µA | 49.2 nC @ 4.5 V | ±20V | 4600 pF @ 12 V | - | 1.43W (Ta), 93.75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
|
NVTP2955GMOSFET 60V 12A 196 onsemi |
0 | - |
|
- |
- | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | Automotive | AEC-Q101 | - | - |
|
MTB55N06ZN-CHANNEL POWER MOSFET onsemi |
3,606 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
MTD5N25E1NFET DPAK 250V 1.0R onsemi |
3,450 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NTD20N06L-001MOSFET N-CH 60V 20A IPAK onsemi |
0 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Ta) | 5V | 48mOhm @ 10A, 5V | 2V @ 250µA | 32 nC @ 5 V | ±15V | 990 pF @ 25 V | - | 1.36W (Ta), 60W (Tj) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
|
NTD4854N-1GMOSFET N-CH 25V 15.7A/128A IPAK onsemi |
1,800 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 15.7A (Ta), 128A (Tc) | 4.5V, 10V | 3.6mOhm @ 30A, 10V | 2.5V @ 250µA | 49.2 nC @ 4.5 V | ±20V | 4600 pF @ 12 V | - | 1.43W (Ta), 93.75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
