上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NTP85N03GMOSFET N-CH 28V 85A TO220AB onsemi |
0 | - |
|
规格书 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28 V | 85A (Tc) | 4.5V, 10V | 6.8mOhm @ 40A, 10V | 3V @ 250µA | 29 nC @ 4.5 V | ±20V | 2150 pF @ 24 V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
NTHD3101FT1GMOSFET P-CH 20V 3.2A CHIPFET onsemi |
3,000 | - |
|
规格书 |
- | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.2A (Tj) | 1.8V, 4.5V | 80mOhm @ 3.2A, 4.5V | 1.5V @ 250µA | 7.4 nC @ 4.5 V | ±8V | 680 pF @ 10 V | Schottky Diode (Isolated) | 1.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | ChipFET™ |
|
NDF08N50ZHMOSFET N-CH 500V 8.5A TO220FP onsemi |
0 | - |
|
规格书 |
- | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 8.5A (Tc) | 10V | 850mOhm @ 3.6A, 10V | 4.5V @ 100µA | 46 nC @ 10 V | ±30V | 1095 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-2 Full Pack |
|
NTD4804N-35GMOSFET N-CH 30V 14.5A/124A IPAK onsemi |
0 | - |
|
规格书 |
- | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14.5A (Ta), 124A (Tc) | 4.5V, 11.5V | 4mOhm @ 30A, 10V | 2.5V @ 250µA | 40 nC @ 4.5 V | ±20V | 4490 pF @ 12 V | - | 1.43W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
NVMSD6N303R2GMOSFET N-CH 30V 6A 8SOIC onsemi |
0 | - |
|
- |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 6A (Ta) | - | 32mOhm @ 6A, 10V | 2.5V @ 250µA | 30 nC @ 10 V | - | 950 pF @ 24 V | Schottky Diode (Isolated) | - | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
|
2SK3492-TL-EGENERAL PURPOSE TRANSISTOR onsemi |
17,500 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2SJ659-DL-EPCH 4V DRIVE SERIES onsemi |
15,000 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BS170-D74ZMOSFET N-CH 60V 500MA TO92-3 onsemi |
12,635 | - |
|
规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 500mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 40 pF @ 10 V | - | 830mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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ATP203-TL-HMOSFET N-CH 30V 75A ATPAK onsemi |
0 | - |
|
- |
- | ATPAK (2 Leads+Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Ta) | 4.5V, 10V | 8.2mOhm @ 38A, 10V | - | 44 nC @ 10 V | ±20V | 2750 pF @ 10 V | - | 50W (Tc) | 150°C (TJ) | - | - | Surface Mount | ATPAK |
|
NTMFS4122NT1GMOSFET N-CH 30V 9.1A 5DFN onsemi |
7,228 | - |
|
规格书 |
- | 8-PowerTDFN, 5 Leads | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.1A (Ta) | 4.5V, 10V | 6mOhm @ 14A, 10V | 2.5V @ 250µA | 30 nC @ 4.5 V | ±20V | 2310 pF @ 24 V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
