制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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TN0106N3-G-P003MOSFET N-CH 60V 350MA TO92-3 Microchip Technology |
0 | - |
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![]() 规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 350mA (Tj) | 4.5V, 10V | 3Ohm @ 500mA, 10V | 2V @ 500µA | - | ±20V | 60 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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APT18M100BMOSFET N-CH 1000V 18A TO247 Microchip Technology |
9 | - |
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![]() 规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 18A (Tc) | 10V | 700mOhm @ 9A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 4845 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT77N60BC6MOSFET N-CH 600V 77A TO247 Microchip Technology |
3 | - |
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![]() 规格书 |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 77A (Tc) | 10V | 41mOhm @ 44.4A, 10V | 3.6V @ 2.96mA | 260 nC @ 10 V | ±20V | 13600 pF @ 25 V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT31M100LMOSFET N-CH 1000V 32A TO264 Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 32A (Tc) | 10V | 400mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 |
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MSC035SMA070B4NMOSFET SIC 700 V 35 MOHM TO-247- Microchip Technology |
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- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 700 V | 75A (Tc) | 18V, 20V | 44mOhm @ 30A, 20V | 5V @ 2mA | 93 nC @ 20 V | +23V, -10V | 1806 pF @ 700 V | - | 304W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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MIC94052BC6-TRMOSFET P-CH 6V 2A SC70-6 Microchip Technology |
0 | - |
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![]() 规格书 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 6 V | 2A (Ta) | 1.8V, 4.5V | 84mOhm @ 100mA, 4.5V | 1.2V @ 250µA | - | 6V | - | - | 270mW (Ta) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | SC-70-6 |
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MIC94053BC6-TRMOSFET P-CH 6V 2A SC70-6 Microchip Technology |
0 | - |
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![]() 规格书 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 6 V | 2A (Ta) | 1.8V, 4.5V | 84mOhm @ 100mA, 4.5V | 1.2V @ 250µA | - | 6V | - | - | 270mW (Ta) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | SC-70-6 |
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MIC94031YM4-TRMOSFET P-CH 16V 1A SOT-143 Microchip Technology |
0 | - |
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![]() 规格书 |
TinyFET® | TO-253-4, TO-253AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 16 V | 1A (Ta) | 2.7V, 10V | 450mOhm @ 100mA, 10V | 1.4V @ 250µA | - | 16V | 100 pF @ 12 V | - | 568mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-143 |
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LND150N3-G-P013MOSFET N-CH 500V 30MA TO92-3 Microchip Technology |
0 | - |
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![]() 规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Box (TB) | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 500 V | 30mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | - | - | ±20V | 10 pF @ 25 V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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MIC94031BM4 TRMOSFET P-CH 16V 1A SOT-143 Microchip Technology |
0 | - |
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![]() 规格书 |
TinyFET® | TO-253-4, TO-253AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 16 V | 1A (Ta) | 2.7V, 10V | 450mOhm @ 100mA, 10V | 1.4V @ 250µA | - | 16V | 100 pF @ 12 V | - | 568mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-143 |