上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APTML100U60R020T1AGMOSFET N-CH 1000V 20A SP1 Microchip Technology |
12 | - |
|
规格书 |
- | SP1 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 20A (Tc) | 10V | 720mOhm @ 10A, 10V | 4V @ 2.5mA | - | ±30V | 6000 pF @ 25 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
|
APT13F120BMOSFET N-CH 1200V 14A TO247 Microchip Technology |
0 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 14A (Tc) | 10V | 1.4Ohm @ 7A, 10V | 5V @ 1mA | 145 nC @ 10 V | ±30V | 4765 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
|
APT20M16LFLLGMOSFET N-CH 200V 100A TO264 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 16mOhm @ 50A, 10V | 5V @ 2.5mA | 140 nC @ 10 V | - | 7220 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
|
APT53F80JMOSFET N-CH 800V 57A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 57A (Tc) | 10V | 110mOhm @ 43A, 10V | 5V @ 5mA | 570 nC @ 10 V | ±30V | 17550 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
APT37F50BMOSFET N-CH 500V 37A TO247 Microchip Technology |
8 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 37A (Tc) | 10V | 150mOhm @ 18A, 10V | 5V @ 1mA | 145 nC @ 10 V | ±30V | 5710 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT14F100BMOSFET N-CH 1000V 14A TO247 Microchip Technology |
17 | - |
|
规格书 |
POWER MOS 8™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 14A (Tc) | 10V | 980mOhm @ 7A, 10V | 5V @ 1mA | 120 nC @ 10 V | ±30V | 3965 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT5020BVRGMOSFET N-CH 500V 26A TO247 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | - | 200mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 4440 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
APT18M100SMOSFET N-CH 1000V 18A D3PAK Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 18A (Tc) | 10V | 700mOhm @ 9A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 4845 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT17F120JMOSFET N-CH 1200V 18A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 18A (Tc) | 10V | 580mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 9670 pF @ 25 V | - | 545W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
MSC025SMA120B4TRANS SJT N-CH 1200V 103A TO247 Microchip Technology |
0 | - |
|
规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 103A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232 nC @ 20 V | +23V, -10V | 3020 pF @ 1000 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
