上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPT65R040CFD7XTMA1MOSFET N-CH 650V 8HSOF Infineon Technologies |
2,000 | - |
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规格书 |
CoolMOS™ CFD7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-2 |
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IMTA65R040M2HXTMA1SILICON CARBIDE MOSFET Infineon Technologies |
150 | - |
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规格书 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IMT65R057M1HXUMA1SILICON CARBIDE MOSFET Infineon Technologies |
1,983 | - |
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规格书 |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | - | SiCFET (Silicon Carbide) | 650 V | - | 18V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-2 |
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AIMDQ75R060M1HXUMA1AUTOMOTIVE_SICMOS Infineon Technologies |
738 | - |
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- |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 34A (Tc) | 15V, 20V | 78mOhm @ 11.1A, 18V | 5.6V @ 4mA | 23 nC @ 18 V | +23V, -5V | 779 pF @ 500 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
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IMBG120R034M2HXTMA1SIC DISCRETE Infineon Technologies |
980 | - |
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- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AUIRF7669L2TRMOSFET N-CH 100V 19A DIRECTFET Infineon Technologies |
3,964 | - |
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规格书 |
HEXFET® | DirectFET™ Isometric L8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Ta), 114A (Tc) | 10V | 4.4mOhm @ 68A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±20V | 5660 pF @ 25 V | - | 3.3W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric L8 |
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IMDQ75R040M1HXUMA1SILICON CARBIDE MOSFET Infineon Technologies |
674 | - |
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规格书 |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 47A (Tc) | 15V, 20V | 37mOhm @ 16.6A, 20V | 5.6V @ 6mA | 34 nC @ 18 V | +23V, -5V | 1135 pF @ 500 V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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IMT65R048M1HXUMA1SILICON CARBIDE MOSFET Infineon Technologies |
1,942 | - |
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规格书 |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | - | SiCFET (Silicon Carbide) | 650 V | - | 18V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-2 |
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AIMZA75R060M1HXKSA1AUTOMOTIVE_SICMOS Infineon Technologies |
239 | - |
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规格书 |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 32A (Tj) | 15V, 20V | 55mOhm @ 11.1A, 20V | 5.6V @ 4mA | 23 nC @ 18 V | +23V, -5V | 779 pF @ 500 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4 |
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IPDQ65R029CFD7XTMA1HIGH POWER_NEW Infineon Technologies |
734 | - |
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规格书 |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 85A (Tc) | 10V | 29mOhm @ 35.8A, 10V | 4.5V @ 1.79mA | 139 nC @ 10 V | ±20V | 7149 pF @ 400 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
