上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IMW65R050M2HXKSA1SILICON CARBIDE MOSFET Infineon Technologies |
207 | - |
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规格书 |
CoolSiC™ Gen 2 | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 38A (Tc) | 15V, 20V | 46mOhm @ 18.2A, 20V | 5.6V @ 3.7mA | 22 nC @ 18 V | +23V, -7V | 790 pF @ 400 V | - | 153W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
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IPDQ65R040CFD7XTMA1HIGH POWER_NEW Infineon Technologies |
744 | - |
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规格书 |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 40mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 97 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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IPT020N13NM6ATMA1TRENCH >=100V Infineon Technologies |
1,416 | - |
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规格书 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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GS-065-014-6-LR-MRGS-065-014-6-LR-MR Infineon Technologies Canada Inc. |
227 | - |
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- | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 15.2A (Tc) | 6V | 138mOhm @ 4A, 6V | 2.6V @ 3mA | 2.7 nC @ 6 V | +7V, -10V | 85 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (8x8) |
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IMT65R072M1HXUMA1SILICON CARBIDE MOSFET Infineon Technologies |
1,919 | - |
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规格书 |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | - | SiCFET (Silicon Carbide) | 650 V | - | 18V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-2 |
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IMZA65R050M2HXKSA1SILICON CARBIDE MOSFET Infineon Technologies |
205 | - |
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规格书 |
CoolSiC™ Gen 2 | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 38A (Tc) | 15V, 20V | 46mOhm @ 18.2A, 20V | 5.6V @ 3.7mA | 22 nC @ 18 V | +23V, -7V | 790 pF @ 400 V | - | 153W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-8 |
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IMT40R025M2HXTMA1SIC-MOS Infineon Technologies |
1,988 | - |
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规格书 |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 400 V | 9A (Ta), 68A (Tc) | 15V, 18V | 32.1mOhm @ 15.7A, 18V | 5.6V @ 5.6mA | 36 nC @ 18 V | +23V, -7V | 1690 pF @ 200 V | - | 3.8W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
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IMZA75R060M1HXKSA1SILICON CARBIDE MOSFET Infineon Technologies |
238 | - |
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规格书 |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 32A (Tc) | 15V, 20V | 55mOhm @ 11.1A, 20V | 5.6V @ 4mA | 23 nC @ 18 V | +23V, -5V | 779 pF @ 500 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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IPTG020N13NM6ATMA1TRENCH >=100V Infineon Technologies |
1,488 | - |
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规格书 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPQC60R040S7AXTMA1MOSFET Infineon Technologies |
730 | - |
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规格书 |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 12V | 40mOhm @ 13A, 12V | 4.5V @ 790µA | 83 nC @ 12 V | ±20V | - | - | 272W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
