上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF6100PBFMOSFET P-CH 20V 5.1A 4FLIPFET Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 4-FlipFet™ | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.1A (Ta) | 2.5V, 4.5V | 65mOhm @ 5.1A, 4.5V | 1.2V @ 250µA | 21 nC @ 5 V | ±12V | 1230 pF @ 15 V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-FlipFet™ |
|
IRF6722STRPBFMOSFET N-CH 30V 13A DIRECTFET Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | DirectFET™ Isometric ST | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta), 58A (Tc) | 4.5V, 10V | 7.3mOhm @ 13A, 10V | 2.4V @ 50µA | 17 nC @ 4.5 V | ±20V | 1320 pF @ 15 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ ST |
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IRF6722MTRPBFMOSFET N-CH 30V 13A DIRECTFET Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | DirectFET™ Isometric MP | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta), 56A (Tc) | 4.5V, 10V | 7.7mOhm @ 13A, 10V | 2.4V @ 50µA | 17 nC @ 4.5 V | ±20V | 1300 pF @ 15 V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MP |
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IRF7210TRPBFMOSFET P-CH 12V 16A 8SO Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 16A (Ta) | 2.5V, 4.5V | 7mOhm @ 16A, 4.5V | 600mV @ 500µA (Min) | 212 nC @ 5 V | ±12V | 17179 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF6710S2TRPBFMOSFET N-CH 25V 12A DIRECTFET Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | DirectFET™ Isometric S1 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 12A (Ta), 37A (Tc) | 4.5V, 10V | 5.9mOhm @ 12A, 10V | 2.4V @ 25µA | 13 nC @ 4.5 V | ±20V | 1190 pF @ 13 V | - | 1.8W (Ta), 15W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric S1 |
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IRF7494TRPBFMOSFET N-CH 150V 5.1A 8SO Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 5.1A (Ta) | 10V | 44mOhm @ 3.1A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±20V | 1783 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF6715MTRPBFMOSFET N-CH 25V 34A DIRECTFET Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 34A (Ta), 180A (Tc) | 4.5V, 10V | 1.6mOhm @ 34A, 10V | 2.4V @ 100µA | 59 nC @ 4.5 V | ±20V | 5340 pF @ 13 V | - | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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IRF6616TRPBFMOSFET N-CH 40V 19A DIRECTFET Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 19A (Ta), 106A (Tc) | 4.5V, 10V | 5mOhm @ 19A, 10V | 2.25V @ 250µA | 44 nC @ 4.5 V | ±20V | 3765 pF @ 20 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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IRF6725MTRPBFMOSFET N-CH 30V 28A DIRECTFET Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 28A (Ta), 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 28A, 10V | 2.35V @ 100µA | 54 nC @ 4.5 V | ±20V | 4700 pF @ 15 V | - | 2.8W (Ta), 100W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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IRF6714MTRPBFMOSFET N-CH 25V 29A DIRECTFET Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 29A (Ta), 166A (Tc) | 4.5V, 10V | 2.1mOhm @ 29A, 10V | 2.4V @ 100µA | 44 nC @ 4.5 V | ±20V | 3890 pF @ 13 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
