上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7601TRPBFMOSFET N-CH 20V 5.7A MICRO8 Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 5.7A (Ta) | 2.7V, 4.5V | 35mOhm @ 3.8A, 4.5V | 700mV @ 250µA (Min) | 22 nC @ 4.5 V | ±12V | 650 pF @ 15 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro8™ |
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IRF7607TRPBFMOSFET N-CH 20V 6.5A MICRO8 Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22 nC @ 5 V | ±12V | 1310 pF @ 15 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro8™ |
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IRF7475TRPBFMOSFET N-CH 12V 11A 8SO Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12 V | 11A (Ta) | 2.8V, 4.5V | 15mOhm @ 8.8A, 4.5V | 2V @ 250µA | 19 nC @ 4.5 V | ±12V | 1590 pF @ 6 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRLR3717TRPBFMOSFET N-CH 20V 120A DPAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 120A (Tc) | 4.5V, 10V | 4mOhm @ 15A, 10V | 2.45V @ 250µA | 31 nC @ 4.5 V | ±20V | 2830 pF @ 10 V | - | 89W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF7702TRPBFMOSFET P-CH 12V 8A 8TSSOP Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 8A (Tc) | 1.8V, 4.5V | 14mOhm @ 8A, 4.5V | 1.2V @ 250µA | 81 nC @ 4.5 V | ±8V | 3470 pF @ 10 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-TSSOP |
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IRFR12N25DTRPBFMOSFET N-CH 250V 14A DPAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 260mOhm @ 8.4A, 10V | 5V @ 250µA | 35 nC @ 10 V | ±30V | 810 pF @ 25 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF7704TRPBFMOSFET P-CH 40V 4.6A 8TSSOP Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 4.6A (Ta) | 4.5V, 10V | 46mOhm @ 4.6A, 10V | 3V @ 250µA | 38 nC @ 4.5 V | ±20V | 3150 pF @ 25 V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-TSSOP |
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IRFR3412TRPBFMOSFET N-CH 100V 48A DPAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 48A (Tc) | 10V | 25mOhm @ 29A, 10V | 5.5V @ 250µA | 89 nC @ 10 V | ±20V | 3430 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF7707TRPBFMOSFET P-CH 20V 7A 8TSSOP Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 7A (Ta) | 2.5V, 4.5V | 22mOhm @ 7A, 4.5V | 1.2V @ 250µA | 47 nC @ 4.5 V | ±12V | 2361 pF @ 15 V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-TSSOP |
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IRF2804STRR7PPMOSFET N-CH 40V 160A D2PAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 6930 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
