制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IRL3714LMOSFET N-CH 20V 36A TO262 Infineon Technologies |
0 | - |
|
![]() 规格书 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7 nC @ 4.5 V | ±20V | 670 pF @ 10 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
![]() |
IRFU3706MOSFET N-CH 20V 75A IPAK Infineon Technologies |
0 | - |
|
![]() 规格书 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 75A (Tc) | 2.8V, 10V | 9mOhm @ 15A, 10V | 2V @ 250µA | 35 nC @ 4.5 V | ±12V | 2410 pF @ 10 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
![]() |
IRF630NLMOSFET N-CH 200V 9.3A TO262 Infineon Technologies |
0 | - |
|
![]() 规格书 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.3A (Tc) | 10V | 300mOhm @ 5.4A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 575 pF @ 25 V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
![]() |
IRFR3708MOSFET N-CH 30V 61A DPAK Infineon Technologies |
0 | - |
|
![]() 规格书 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 61A (Tc) | 2.8V, 10V | 12.5mOhm @ 15A, 10V | 2V @ 250µA | 24 nC @ 4.5 V | ±12V | 2417 pF @ 15 V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
![]() |
IRFU12N25DMOSFET N-CH 250V 14A IPAK Infineon Technologies |
0 | - |
|
![]() 规格书 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 260mOhm @ 8.4A, 10V | 5V @ 250µA | 35 nC @ 10 V | ±30V | 810 pF @ 25 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
![]() |
IRF3709LMOSFET N-CH 30V 90A TO262 Infineon Technologies |
0 | - |
|
![]() 规格书 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 41 nC @ 5 V | ±20V | 2672 pF @ 16 V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 |
![]() |
IRF3708LMOSFET N-CH 30V 62A TO262 Infineon Technologies |
0 | - |
|
![]() 规格书 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 62A (Tc) | 2.8V, 10V | 12mOhm @ 15A, 10V | 2V @ 250µA | 24 nC @ 4.5 V | ±12V | 2417 pF @ 15 V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
![]() |
IRF6601MOSFET N-CH 20V 26A DIRECTFET Infineon Technologies |
0 | - |
|
![]() 规格书 |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 26A (Ta), 85A (Tc) | 4.5V, 10V | 3.8mOhm @ 26A, 10V | 2.2V @ 250µA | 45 nC @ 4.5 V | ±20V | 3440 pF @ 15 V | - | 3.6W (Ta), 42W (Tc) | - | - | - | Surface Mount | DIRECTFET™ MT |
![]() |
IRF6602MOSFET N-CH 20V 11A DIRECTFET Infineon Technologies |
0 | - |
|
![]() 规格书 |
HEXFET® | DirectFET™ Isometric MQ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 11A (Ta), 48A (Tc) | 4.5V, 10V | 13mOhm @ 11A, 10V | 2.3V @ 250µA | 18 nC @ 4.5 V | ±20V | 1420 pF @ 10 V | - | 2.3W (Ta), 42W (Tc) | - | - | - | Surface Mount | DIRECTFET™ MQ |
![]() |
IRF7453MOSFET N-CH 250V 2.2A 8SO Infineon Technologies |
0 | - |
|
![]() 规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.2A (Ta) | 10V | 230mOhm @ 1.3A, 10V | 5.5V @ 250µA | 38 nC @ 10 V | ±30V | 930 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |