上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP65R225C7XKSA1MOSFET N-CH 650V 11A TO220-3 Infineon Technologies |
160 | - |
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规格书 |
CoolMOS™ C7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20 nC @ 10 V | ±20V | 996 pF @ 400 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPD70R1K4CEAUMA1MOSFET N-CH 700V 5.4A TO252-3 Infineon Technologies |
14,900 | - |
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规格书 |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 700 V | 5.4A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 3.5V @ 130µA | 10.5 nC @ 10 V | ±20V | 225 pF @ 100 V | - | 53W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD25DP06NMATMA1MOSFET P-CH 60V 6.5A TO252-3 Infineon Technologies |
2,475 | - |
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规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.5A (Tc) | 10V | 250mOhm @ 6.5A, 10V | 4V @ 270µA | 10.6 nC @ 10 V | ±20V | 420 pF @ 30 V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-313 |
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IRFHM3911TRPBFMOSFET N-CH 100V 3.2A/20A 8PQFN Infineon Technologies |
32,666 | - |
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规格书 |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3.2A (Ta), 20A (Tc) | 10V | 115mOhm @ 6.3A, 10V | 4V @ 35µA | 26 nC @ 10 V | ±20V | 760 pF @ 50 V | - | 2.8W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (3x3) |
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IPD50N04S4L08ATMA1MOSFET N-CH 40V 50A TO252-3 Infineon Technologies |
15,652 | - |
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规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 7.3mOhm @ 50A, 10V | 2.2V @ 17µA | 30 nC @ 10 V | +20V, -16V | 2340 pF @ 25 V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-313 |
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IPD50N04S408ATMA1MOSFET N-CH 40V 50A TO252-3 Infineon Technologies |
5,934 | - |
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规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 7.9mOhm @ 50A, 10V | 4V @ 17µA | 22.4 nC @ 10 V | ±20V | 1780 pF @ 6 V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-313 |
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IPD80R3K3P7ATMA1MOSFET N-CH 800V 1.9A TO252-3 Infineon Technologies |
4,993 | - |
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规格书 |
CoolMOS™ P7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.9A (Tc) | 10V | 3.3Ohm @ 590mA, 10V | 3.5V @ 30µA | 5.8 nC @ 10 V | ±20V | 120 pF @ 500 V | - | 18W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD15N06S2L64ATMA2MOSFET N-CH 55V 19A TO252-31 Infineon Technologies |
3,360 | - |
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规格书 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 19A (Tc) | 4.5V, 10V | 64mOhm @ 13A, 10V | 2V @ 14µA | 13 nC @ 10 V | ±20V | 354 pF @ 25 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
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IRFH8318TRPBFMOSFET N-CH 30V 27A/120A PQFN Infineon Technologies |
23,294 | - |
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规格书 |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 27A (Ta), 120A (Tc) | 4.5V, 10V | 3.1mOhm @ 20A, 10V | 2.35V @ 50µA | 41 nC @ 10 V | ±20V | 3180 pF @ 10 V | - | 3.6W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
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IAUC60N04S6N044ATMA1IAUC60N04S6N044ATMA1 Infineon Technologies |
10,403 | - |
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规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 7V, 10V | 4.52mOhm @ 30A, 10V | 3V @ 14µA | 18 nC @ 10 V | ±20V | 1042 pF @ 25 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8 |
