上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPB160N04S203ATMA4MOSFET N-CH 40V 160A TO263-7 Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 2.9mOhm @ 60A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 5300 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
|
IAUA250N04S6N006AUMA1MOSFET_(20V 40V) PG-HSOF-5 Infineon Technologies |
8,077 | - |
|
- |
OptiMOS™ | 5-PowerSFN | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 40 V | 450A (Tj) | 7V, 10V | 0.64mOhm @ 100A, 10V | 3V @ 145µA | 169 nC @ 10 V | ±20V | 11064 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-5-4 |
|
IPZA60R180P7XKSA1MOSFET N-CH 600V 18A TO247-4 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ P7 | TO-247-4 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 180mOhm @ 5.6A, 10V | 4V @ 280µA | 25 nC @ 10 V | ±20V | 1081 pF @ 400 V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
|
AUIRFS8407TRLMOSFET N-CH 40V 195A D2PAK Infineon Technologies |
290 | - |
|
规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.8mOhm @ 100A, 10V | 4V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPP60R099CPAAKSA1MOSFET N-CH 600V 31A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 105mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80 nC @ 10 V | ±20V | 2800 pF @ 100 V | - | 255W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPI60R099CPAAKSA1MOSFET N-CH 600V 31A TO262-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 105mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80 nC @ 10 V | ±20V | 2800 pF @ 100 V | - | 255W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
IRFB3004PBFMOSFET N-CH 40V 195A TO220AB Infineon Technologies |
471 | - |
|
规格书 |
HEXFET® | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.75mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9200 pF @ 25 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IPZA60R120P7XKSA1MOSFET N-CH 600V 26A TO247-4 Infineon Technologies |
20 | - |
|
规格书 |
CoolMOS™ P7 | TO-247-4 | Bulk | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 26A (Tc) | 10V | 120mOhm @ 8.2A, 10V | 4V @ 410µA | 36 nC @ 10 V | ±20V | 1544 pF @ 400 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
|
SPW15N60C3FKSA1MOSFET N-CH 650V 15A TO247-3 Infineon Technologies |
206 | - |
|
规格书 |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 280mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63 nC @ 10 V | ±20V | 1660 pF @ 25 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
|
IPW65R125C7XKSA1MOSFET N-CH 650V 18A TO247-3 Infineon Technologies |
257 | - |
|
规格书 |
CoolMOS™ C7 | TO-247-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 650 V | 18A (Tc) | 10V | 125mOhm @ 8.9A, 10V | 4V @ 440µA | 35 nC @ 10 V | ±20V | 1670 pF @ 400 V | - | 101W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
