制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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BUZ31HXKSA1MOSFET N-CH 200V 14.5A TO220-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 14.5A (Tc) | 5V | 200mOhm @ 9A, 5V | 4V @ 1mA | - | ±20V | 1120 pF @ 25 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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BSP318SL6327HTSA1MOSFET N-CH 60V 2.6A SOT223-4 Infineon Technologies |
0 | - |
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![]() 规格书 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 2.6A (Ta) | 4.5V, 10V | 90mOhm @ 2.6A, 10V | 2V @ 20µA | 20 nC @ 10 V | ±20V | 380 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4-21 |
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IRFU7440PBFMOSFET N-CH 40V 90A IPAK Infineon Technologies |
0 | - |
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HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 6V, 10V | 2.4mOhm @ 90A, 10V | 3.9V @ 100µA | 134 nC @ 10 V | ±20V | 4610 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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IRFB23N15DPBFMOSFET N-CH 150V 23A TO220AB Infineon Technologies |
0 | - |
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HEXFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 23A (Tc) | 10V | 90mOhm @ 14A, 10V | 5.5V @ 250µA | 56 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 3.8W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF1404ZSPBFMOSFET N-CH 40V 180A D2PAK Infineon Technologies |
0 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 150µA | 150 nC @ 10 V | ±20V | 4340 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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SPP35N10MOSFET N-CH 100V 35A TO220-3 Infineon Technologies |
0 | - |
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SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 10V | 44mOhm @ 26.4A, 10V | 4V @ 83µA | 65 nC @ 10 V | ±20V | 1570 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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SPD100N03S2L-04MOSFET N-CH 30V 100A TO252-5 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-252-5, DPAK (4 Leads + Tab), TO-252AD | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 4.2mOhm @ 50A, 10V | 2V @ 100µA | 89.7 nC @ 10 V | ±20V | 3320 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-5-1 |
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IPS80R600P7AKMA1MOSFET N-CH 800V 8A TO251-3 Infineon Technologies |
0 | - |
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CoolMOS™ P7 | TO-251-3 Stub Leads, IPAK | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20 nC @ 10 V | ±20V | 570 pF @ 500 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-342 |
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IPP45N06S409AKSA2MOSFET N-CH 60V 45A TO220-3 Infineon Technologies |
0 | - |
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OptiMOS™ T2 | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 10V | 9.4mOhm @ 45A, 10V | 4V @ 34µA | 47 nC @ 10 V | ±20V | 3785 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-1 |
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IPP80N06S2L06AKSA1MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 6.3mOhm @ 69A, 10V | 2V @ 180µA | 150 nC @ 10 V | ±20V | 3800 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |