上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF6811STRPBF-INFDIRECTFET PLUS POWER MOSFET Infineon Technologies |
3,676 | - |
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规格书 |
DirectFET® | DirectFET™ Isometric SQ | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 19A (Ta), 74A (Tc) | - | 3.7mOhm @ 19A, 10V | 2.1V @ 35µA | 17 nC @ 4.5 V | ±16V | 1590 pF @ 13 V | - | 2.1W (Ta), 32W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric SQ |
|
IPA60R520C6XKSA1MOSFET N-CH 600V 8.1A TO220-FP Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 8.1A (Tc) | 10V | 520mOhm @ 2.8A, 10V | 3.5V @ 230µA | 23.4 nC @ 10 V | ±20V | 512 pF @ 100 V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IRFP048NPBFIRFP048 - 12V-300V N-CHANNEL POW Infineon Technologies |
34,892 | - |
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规格书 |
HEXFET® | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 64A (Tc) | 10V | 16mOhm @ 37A, 10V | 4V @ 250µA | 89 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
|
IPP16CN10LGXKSA1MOSFET N-CH 100V 54A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 54A (Tc) | 10V | 15.7mOhm @ 54A, 10V | 2.4V @ 61µA | 44 nC @ 10 V | ±20V | 4190 pF @ 50 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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BSC886N03LSGATMA1MOSFET N-CH 30V 13A/65A TDSON Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta), 65A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 26 nC @ 10 V | ±20V | 2100 pF @ 15 V | - | 2.5W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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ISZ0901NLSATMA125V, N-CH MOSFET, LOGIC LEVEL, P Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 40A (Tc) | 4.5V, 10V | 8.1mOhm @ 20A, 10V | 2V @ 250µA | 9.1 nC @ 10 V | ±20V | 670 pF @ 12 V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-25 |
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BSP149L6906HTSA1MOSFET N-CH 200V 660MA SOT223-4 Infineon Technologies |
0 | - |
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规格书 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 200 V | 660mA (Ta) | 0V, 10V | 1.8Ohm @ 660mA, 10V | 1V @ 400µA | 14 nC @ 5 V | ±20V | 430 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4-21 |
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IPA50R520CPXKSA1MOSFET N-CH 500V 7.1A TO220-FP Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.1A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17 nC @ 10 V | ±20V | 680 pF @ 100 V | - | 66W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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IPP50R520CPXKSA1MOSFET N-CH 500V 7.1A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.1A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17 nC @ 10 V | ±20V | 680 pF @ 100 V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPI70N04S406AKSA1MOSFET N-CH 40V 70A TO262-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 10V | 6.5mOhm @ 70A, 10V | 4V @ 26µA | 32 nC @ 10 V | ±20V | 2550 pF @ 25 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
